External Memory Interface Handbook Volume 2: Design Guidelines

ID 683385
Date 5/08/2017
Document Table of Contents Write Leveling tDQSS

In DDR2 SDRAM and DDR3 SDRAM interfaces, write leveling tDQSS timing is a calibrated path that details skew margin for the arrival time of the DQS strobe with respect to the arrival time of CK/CK# at the memory side.

For proper write leveling configuration, DLL delay chain must be equal to 8. The PHY IP reports the margin through an equation. For more information, refer to <phy_variation_name> _report_timing_core.tcl.

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