External Memory Interface Handbook Volume 2: Design Guidelines: For UniPHY-based Device Families

ID 683385
Date 3/06/2023
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3.2.3.2. Write to Memory Using an ODT Setting of 150-ohm

The following figure shows a double parallel termination scheme (Class II) using ODT on the memory with a memory-side series resistor when the FPGA is writing to the memory using a 25-ohm  OCT drive strength setting on the FPGA.
Figure 32. Double Parallel Termination Scheme (Class II) Using ODT on DDR2 SDRAM DIMM with Memory-Side Series Resistor