External Memory Interface Handbook Volume 3: Reference Material: For UniPHY-based Device Families
ID
683841
Date
3/06/2023
Public
1. Functional Description—UniPHY
2. Functional Description— Intel® MAX® 10 EMIF IP
3. Functional Description—Hard Memory Interface
4. Functional Description—HPS Memory Controller
5. Functional Description—HPC II Controller
6. Functional Description—QDR II Controller
7. Functional Description—RLDRAM II Controller
8. Functional Description—RLDRAM 3 PHY-Only IP
9. Functional Description—Example Designs
10. Introduction to UniPHY IP
11. Latency for UniPHY IP
12. Timing Diagrams for UniPHY IP
13. External Memory Interface Debug Toolkit
14. Upgrading to UniPHY-based Controllers from ALTMEMPHY-based Controllers
1.1. I/O Pads
1.2. Reset and Clock Generation
1.3. Dedicated Clock Networks
1.4. Address and Command Datapath
1.5. Write Datapath
1.6. Read Datapath
1.7. Sequencer
1.8. Shadow Registers
1.9. UniPHY Interfaces
1.10. UniPHY Signals
1.11. PHY-to-Controller Interfaces
1.12. Using a Custom Controller
1.13. AFI 3.0 Specification
1.14. Register Maps
1.15. Ping Pong PHY
1.16. Efficiency Monitor and Protocol Checker
1.17. UniPHY Calibration Stages
1.18. Document Revision History
1.7.1.1. Nios® II-based Sequencer Function
1.7.1.2. Nios® II-based Sequencer Architecture
1.7.1.3. Nios® II-based Sequencer SCC Manager
1.7.1.4. Nios® II-based Sequencer RW Manager
1.7.1.5. Nios® II-based Sequencer PHY Manager
1.7.1.6. Nios® II-based Sequencer Data Manager
1.7.1.7. Nios® II-based Sequencer Tracking Manager
1.7.1.8. Nios® II-based Sequencer Processor
1.7.1.9. Nios® II-based Sequencer Calibration and Diagnostics
1.17.1. Calibration Overview
1.17.2. Calibration Stages
1.17.3. Memory Initialization
1.17.4. Stage 1: Read Calibration Part One—DQS Enable Calibration and DQ/DQS Centering
1.17.5. Stage 2: Write Calibration Part One
1.17.6. Stage 3: Write Calibration Part Two—DQ/DQS Centering
1.17.7. Stage 4: Read Calibration Part Two—Read Latency Minimization
1.17.8. Calibration Signals
1.17.9. Calibration Time
4.1. Features of the SDRAM Controller Subsystem
4.2. SDRAM Controller Subsystem Block Diagram
4.3. SDRAM Controller Memory Options
4.4. SDRAM Controller Subsystem Interfaces
4.5. Memory Controller Architecture
4.6. Functional Description of the SDRAM Controller Subsystem
4.7. SDRAM Power Management
4.8. DDR PHY
4.9. Clocks
4.10. Resets
4.11. Port Mappings
4.12. Initialization
4.13. SDRAM Controller Subsystem Programming Model
4.14. Debugging HPS SDRAM in the Preloader
4.15. SDRAM Controller Address Map and Register Definitions
4.16. Document Revision History
10.7.1. DDR2, DDR3, and LPDDR2 Resource Utilization in Arria V Devices
10.7.2. DDR2 and DDR3 Resource Utilization in Arria II GZ Devices
10.7.3. DDR2 and DDR3 Resource Utilization in Stratix III Devices
10.7.4. DDR2 and DDR3 Resource Utilization in Stratix IV Devices
10.7.5. DDR2 and DDR3 Resource Utilization in Arria V GZ and Stratix V Devices
10.7.6. QDR II and QDR II+ Resource Utilization in Arria V Devices
10.7.7. QDR II and QDR II+ Resource Utilization in Arria II GX Devices
10.7.8. QDR II and QDR II+ Resource Utilization in Arria II GZ, Arria V GZ, Stratix III, Stratix IV, and Stratix V Devices
10.7.9. RLDRAM II Resource Utilization in Arria® V Devices
10.7.10. RLDRAM II Resource Utilization in Arria® II GZ, Arria® V GZ, Stratix® III, Stratix® IV, and Stratix® V Devices
13.1. User Interface
13.2. Setup and Use
13.3. Operational Considerations
13.4. Troubleshooting
13.5. Debug Report for Arria V and Cyclone V SoC Devices
13.6. On-Chip Debug Port for UniPHY-based EMIF IP
13.7. Example Tcl Script for Running the Legacy EMIF Debug Toolkit
13.8. Document Revision History
2.4.5. Stratix® 10 EMIF Architecture: I/O Lane
An I/O bank contains 48 I/O pins, organized into four I/O lanes of 12 pins each.
Each I/O lane can implement one x8/x9 read capture group (DQS group), with two pins functioning as the read capture clock/strobe pair (DQS/DQS#), and up to 10 pins functioning as data pins (DQ and DM pins). To implement x18 and x36 groups, you can use multiple lanes within the same bank.
It is also possible to implement a pair of x4 groups in a lane. In this case, four pins function as clock/strobe pair, and 8 pins function as data pins. DM is not available for x4 groups. There must be an even number of x4 groups for each interface.
For x4 groups, DQS0 and DQS1 must be placed in the same I/O lane as a pair. Similarly, DQS2 and DQS3 must be paired. In general, DQS(x) and DQS(x+1) must be paired in the same I/O lane.
Group Size | Number of Lanes Used | Maximum Number of Data Pins per Group |
---|---|---|
x8 / x9 | 1 | 10 |
x18 | 2 | 22 |
x36 | 4 | 46 |
pair of x4 | 1 | 4 per group, 8 per lane |
Figure 33. x4 Group
Figure 34. x8 Group
Figure 35. x18 Group
Figure 36. x36 Group