External Memory Interfaces Intel® Stratix® 10 FPGA IP User Guide

ID 683741
Date 9/26/2022
Public

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7.1.3. Intel Stratix 10 EMIF IP DDR4 Parameters: Memory

Table 224.  Group: Memory / Topology
Display Name Description
Memory format Specifies the format of the external memory device. The following formats are supported: Component - a Discrete memory device; UDIMM - Unregistered/Unbuffered DIMM where address/control, clock, and data are unbuffered; RDIMM - Registered DIMM where address/control and clock are buffered; LRDIMM - Load Reduction DIMM where address/control, clock, and data are buffered. LRDIMM reduces the load to increase memory speed and supports higher densities than RDIMM; SODIMM - Small Outline DIMM is similar to UDIMM but smaller in size and is typically used for systems with limited space. Some memory protocols may not be available in all formats. (Identifier: MEM_DDR4_FORMAT_ENUM)
DQ width Specifies the total number of data pins in the interface. (Identifier: MEM_DDR4_DQ_WIDTH)
DQ pins per DQS group Specifies the total number of DQ pins per DQS group. (Identifier: MEM_DDR4_DQ_PER_DQS)
Number of clocks Specifies the number of CK/CK# clock pairs exposed by the memory interface. Usually more than 1 pair is required for RDIMM/LRDIMM formats. The value of this parameter depends on the memory device selected; refer to the data sheet for your memory device. (Identifier: MEM_DDR4_CK_WIDTH)
Number of chip selects Specifies the total number of chip selects in the interface, up to a maximum of 4. This parameter applies to discrete components only. (Identifier: MEM_DDR4_DISCRETE_CS_WIDTH)
Number of DIMMs Total number of DIMMs. (Identifier: MEM_DDR4_NUM_OF_DIMMS)
Chip ID width Specifies the number of chip ID pins. Only applicable to registered and load-reduced DIMMs that use 3DS/TSV memory devices. (Identifier: MEM_DDR4_CHIP_ID_WIDTH)
Number of physical ranks per DIMM Number of ranks per DIMM. For LRDIMM, this represents the number of physical ranks on the DIMM behind the memory buffer (Identifier: MEM_DDR4_RANKS_PER_DIMM)
Row address width Specifies the number of row address pins. Refer to the data sheet for your memory device. The density of the selected memory device determines the number of address pins needed for access to all available rows. (Identifier: MEM_DDR4_ROW_ADDR_WIDTH)
Column address width Specifies the number of column address pins. Refer to the data sheet for your memory device. The density of the selected memory device determines the number of address pins needed for access to all available columns. (Identifier: MEM_DDR4_COL_ADDR_WIDTH)
Bank address width Specifies the number of bank address pins. Refer to the data sheet for your memory device. The density of the selected memory device determines the number of bank address pins needed for access to all available banks. (Identifier: MEM_DDR4_BANK_ADDR_WIDTH)
Bank group width Specifies the number of bank group pins. Refer to the data sheet for your memory device. The density of the selected memory device determines the number of bank group pins needed for access to all available bank groups. (Identifier: MEM_DDR4_BANK_GROUP_WIDTH)
Data mask Indicates whether the interface uses data mask (DM) pins. This feature allows specified portions of the data bus to be written to memory (not available in x4 mode). One DM pin exists per DQS group. (Identifier: MEM_DDR4_DM_EN)
Write DBI Indicates whether the interface uses write data bus inversion (DBI). This feature provides better signal integrity and write margin. This feature is unavailable if Data Mask is enabled or in x4 mode. (Identifier: MEM_DDR4_WRITE_DBI)
Read DBI Specifies whether the interface uses read data bus inversion (DBI). Enable this feature for better signal integrity and read margin. This feature is not available in x4 configurations. (Identifier: MEM_DDR4_READ_DBI)
Enable address mirroring for odd chip-selects Enabling address mirroring for multi-CS discrete components. Typically used when components are arranged in a clamshell layout. (Identifier: MEM_DDR4_DISCRE