Cyclone® V Device Handbook: Volume 1: Device Interfaces and Integration
ID
683375
Date
10/18/2023
Public
1. Logic Array Blocks and Adaptive Logic Modules in Cyclone® V Devices
2. Embedded Memory Blocks in Cyclone® V Devices
3. Variable Precision DSP Blocks in Cyclone® V Devices
4. Clock Networks and PLLs in Cyclone® V Devices
5. I/O Features in Cyclone® V Devices
6. External Memory Interfaces in Cyclone® V Devices
7. Configuration, Design Security, and Remote System Upgrades in Cyclone® V Devices
8. SEU Mitigation for Cyclone® V Devices
9. JTAG Boundary-Scan Testing in Cyclone® V Devices
10. Power Management in Cyclone® V Devices
2.1. Types of Embedded Memory
2.2. Embedded Memory Design Guidelines for Cyclone® V Devices
2.3. Embedded Memory Features
2.4. Embedded Memory Modes
2.5. Embedded Memory Clocking Modes
2.6. Parity Bit in Memory Blocks
2.7. Byte Enable in Embedded Memory Blocks
2.8. Memory Blocks Packed Mode Support
2.9. Memory Blocks Address Clock Enable Support
2.10. Embedded Memory Blocks in Cyclone® V Devices Revision History
4.2.1. PLL Physical Counters in Cyclone® V Devices
4.2.2. PLL Locations in Cyclone® V Devices
4.2.3. PLL Migration Guidelines
4.2.4. Fractional PLL Architecture
4.2.5. PLL Cascading
4.2.6. PLL External Clock I/O Pins
4.2.7. PLL Control Signals
4.2.8. Clock Feedback Modes
4.2.9. Clock Multiplication and Division
4.2.10. Programmable Phase Shift
4.2.11. Programmable Duty Cycle
4.2.12. Clock Switchover
4.2.13. PLL Reconfiguration and Dynamic Phase Shift
5.1. I/O Resources Per Package for Cyclone® V Devices
5.2. I/O Vertical Migration for Cyclone® V Devices
5.3. I/O Standards Support in Cyclone® V Devices
5.4. I/O Design Guidelines for Cyclone® V Devices
5.5. I/O Banks Locations in Cyclone® V Devices
5.6. I/O Banks Groups in Cyclone® V Devices
5.7. I/O Element Structure in Cyclone® V Devices
5.8. Programmable IOE Features in Cyclone® V Devices
5.9. On-Chip I/O Termination in Cyclone® V Devices
5.10. External I/O Termination for Cyclone® V Devices
5.11. Dedicated High-Speed Circuitries
5.12. Differential Transmitter in Cyclone® V Devices
5.13. Differential Receiver in Cyclone® V Devices
5.14. Source-Synchronous Timing Budget
5.15. I/O Features in Cyclone® V Devices Revision History
5.4.1. Mixing Voltage-Referenced and Non-Voltage-Referenced I/O Standards
5.4.2. PLLs and Clocking
5.4.3. LVDS Interface with External PLL Mode
5.4.4. Guideline: Use the Same VCCPD for All I/O Banks in a Group
5.4.5. Guideline: Ensure Compatible VCCIO and VCCPD Voltage in the Same Bank
5.4.6. Guideline: VREF Pin Restrictions
5.4.7. Guideline: Observe Device Absolute Maximum Rating for 3.3 V Interfacing
5.4.8. Guideline: Adhere to the LVDS I/O Restrictions and Differential Pad Placement Rules
5.4.9. Guideline: Pin Placement for General Purpose High-Speed Signals
5.6.1. Modular I/O Banks for Cyclone® V E Devices
5.6.2. Modular I/O Banks for Cyclone® V GX Devices
5.6.3. Modular I/O Banks for Cyclone® V GT Devices
5.6.4. Modular I/O Banks for Cyclone® V SE Devices
5.6.5. Modular I/O Banks for Cyclone® V SX Devices
5.6.6. Modular I/O Banks for Cyclone® V ST Devices
5.8.1. Programmable Current Strength
5.8.2. Programmable Output Slew Rate Control
5.8.3. Programmable IOE Delay
5.8.4. Programmable Output Buffer Delay
5.8.5. Programmable Pre-Emphasis
5.8.6. Programmable Differential Output Voltage
5.8.7. Open-Drain Output
5.8.8. Bus-Hold Circuitry
5.8.9. Pull-up Resistor
5.9.1. RS OCT without Calibration in Cyclone® V Devices
5.9.2. RS OCT with Calibration in Cyclone® V Devices
5.9.3. RT OCT with Calibration in Cyclone® V Devices
5.9.4. Dynamic OCT in Cyclone® V Devices
5.9.5. LVDS Input RD OCT in Cyclone® V Devices
5.9.6. OCT Calibration Block in Cyclone® V Devices
6.3.1. Guideline: Using DQ/DQS Pins
6.3.2. DQ/DQS Bus Mode Pins for Cyclone® V Devices
6.3.3. DQ/DQS Groups in Cyclone V E
6.3.4. DQ/DQS Groups in Cyclone V GX
6.3.5. DQ/DQS Groups in Cyclone V GT
6.3.6. DQ/DQS Groups in Cyclone V SE
6.3.7. DQ/DQS Groups in Cyclone V SX
6.3.8. DQ/DQS Groups in Cyclone V ST
6.5.1. Features of the Hard Memory Controller
6.5.2. Multi-Port Front End
6.5.3. Bonding Support
6.5.4. Hard Memory Controller Width for Cyclone V E
6.5.5. Hard Memory Controller Width for Cyclone V GX
6.5.6. Hard Memory Controller Width for Cyclone V GT
6.5.7. Hard Memory Controller Width for Cyclone V SE
6.5.8. Hard Memory Controller Width for Cyclone V SX
6.5.9. Hard Memory Controller Width for Cyclone V ST
7.1. Enhanced Configuration and Configuration via Protocol
7.2. MSEL Pin Settings
7.3. Configuration Sequence
7.4. Configuration Timing Waveforms
7.5. Device Configuration Pins
7.6. Fast Passive Parallel Configuration
7.7. Active Serial Configuration
7.8. Using EPCS and EPCQ Devices
7.9. Passive Serial Configuration
7.10. JTAG Configuration
7.11. Configuration Data Compression
7.12. Remote System Upgrades
7.13. Design Security
7.14. Configuration, Design Security, and Remote System Upgrades in Cyclone® V Devices Revision History
9.1. BST Operation Control
9.2. I/O Voltage for JTAG Operation
9.3. Performing BST
9.4. Enabling and Disabling IEEE Std. 1149.1 BST Circuitry
9.5. Guidelines for IEEE Std. 1149.1 Boundary-Scan Testing
9.6. IEEE Std. 1149.1 Boundary-Scan Register
9.7. JTAG Boundary-Scan Testing in Cyclone® V Devices Revision History
7.3.6. User Mode
You can enable the optional INIT_DONE pin to monitor the initialization stage. After the INIT_DONE pin is pulled high, initialization completes and your design starts executing. The user I/O pins will then function as specified by your design.
During device initialization stage, the FPGA registers, core logic, and I/O are not released from reset at the same time. The increase in clock frequency, device size, and design complexity require a reset strategy that considers the differences in the release from reset. Intel® recommends that you use the following implementations to reset your design properly and until the device has fully entered user mode:
- Hold the entire design in reset for a period of time by following the CONF_DONE high to user mode (tCD2UM) or CONF_DONE high to user mode with CLKUSR option turned on (tCD2UMC) specifications as defined in the Cyclone® V Device Datasheet before starting any operation after the device enters into user mode. For example, the tCD2UM range for Cyclone® V device is between 175 us to 437 us.
- If you have an external device that reacts based on an Intel® FPGA output pin, perform the following steps to avoid false reaction:
- Ensure that the external device ignores the state of the FPGA output pin until the external INIT_DONE pin goes high. Refer to the tCD2UM or tCD2UMC specifications in the Cyclone® V Device Datasheet for more information.
- Keep the input state to the external device constant by using the external logic until the external INIT_DONE pin goes high.