Intel® Agilex™ Embedded Memory User Guide

ID 683241
Date 4/25/2022

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4.2.2. eSRAM System Features

An eSRAM system provides features for handling simultaneous read and write requests, ensuring data integrity and coherency, and maximizing power efficiency.

A given eSRAM system can achieve a maximum frequency of 750 MHz. The number of available eSRAM systems depends on the Intel® Agilex™ device in use.

Every memory port within an eSRAM system has one write port and one read port, which can handle simultaneous read and write requests. Each port has access to only its own banks, thus ensuring that each port is independent from its neighbors.

The eSRAM system has an error correction code (ECC) which is always enabled at the cost of some user-accessible data capacity. The ECC can improve data integrity by encoding write data with extended Hamming code and decoding read data for Single-bit Error Correction, Double-bit Error Detection (SECDED).

There is a data coherency feature called Write Forwarding which you can enable to handle simultaneous write and read access to the same eSRAM memory location. The write data on the write port is forwarded to the read port and not read from the targeted SRAM bank. The write data is still written into the targeted eSRAM bank.