PCB Design Guidelines (HSSI, EMIF, MIPI, True Differential, PDN) User Guide: Agilex™ 5 FPGAs and SoCs
ID
821801
Date
8/29/2025
Public
1. Overview
2. BGA Footprint and Land Pattern
3. General PCB Design Considerations
4. VPBGA PCB Routing Guidelines
5. MBGA PCB Routing Guidelines
6. EMIF PCB Routing Guidelines (VPBGA and MBGA)
7. MIPI Interface Layout Design Guidelines (VPBGA and MBGA)
8. True Differential I/O Interface PCB Routing Guidelines (VPBGA and MBGA)
9. Power Distribution Network Design Guidelines
10. Document Revision History for the PCB Design Guidelines (HSSI, EMIF, MIPI, True Differential, PDN) User Guide: Agilex™ 5 FPGAs and SoCs
9.1. Agilex™ 5 Power Distribution Network Design Guidelines Overview
9.2. Power Delivery Overview
9.3. Board Power Delivery Network Recommendations
9.4. Board LC Recommended Filters for Noise Reduction in Combined Power Delivery Rails
9.5. PCB PDN Design Guideline for Unused GTS Transceiver
9.6. PCB Voltage Regulator Recommendation for PCB Power Rails
9.7. Board PDN Simulations
9.8. Agilex™ 5 Device Family PDN Design Summary
6.5.5. Power Delivery Recommendation for DDR4 Discrete Configurations
This section describes PDN design guidelines for the memory side in a memory down topology.
The total number of decoupling capacitors is based on single channel. If multiple channels are sharing the same power rail, you must scale the number of decoupling capacitors at memories for all channels accordingly. Use smaller decoupling capacitors in memory PDN design to minimize area, inductance, and resistance on the PDN path.
Memory Configuration | Power Domain | Decoupling Location | Quantity × Value (size) |
---|---|---|---|
Device-down 1Rx8 | VDDQ/VDD shorted | Four near each x8 DRAM device | 36 × 1 µF (0402) |
Distribute around DRAM devices | 9 × 10 µF (0603) | ||
VPP | Two near each x8 DRAM device | 18 × 1 µF (0402) | |
Distribute around DRAM devices | 5 × 10 µF (0603) | ||
VTT | Place near RTT (termination resistors) | 16 × 1 µF (0402) | |
Place near RTT | 4 × 10 µF (0603) | ||
Device-down 1Rx16 | VDDQ/VDD shorted | Four near each x16 DRAM device | 18 × 1 µF (0402) |
Distribute around DRAM devices | 5 × 10 µF (0603) | ||
VPP | Two near each x16 DRAM device | 10 × 1 µF (0402) | |
Distribute around DRAM devices | 3 × 10 µF (0603) | ||
VTT | Place near RTT | 8 × 1 µF (0402) | |
Place near RTT | 2 × 10 µF (0603) |