Intel® MAX® 10 External Memory Interface User Guide

ID 683087
Date 10/31/2022
Document Table of Contents
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2.6. Intel® MAX® 10 External Memory Write Datapath

For all DDR applications supported by Intel® MAX® 10 devices, the DQS strobe is sent to the external DRAM as center-aligned to the write DQ data.

The clock that clocks DDIO registers of the DQ output is phase-shifted –90º from the clock that drives the DDIO registers of the DQS strobe. This create a DQS strobe that is center-aligned to the DQ data.

The external memory write datapath is not calibrated.