Intel® Stratix® 10 Embedded Memory User Guide

Download PDF
ID 683423
Date 9/26/2022
Public

A newer version of this document is available. Customers should click here to go to the newest version.

Document Table of Contents
Document Table of Contents x
1. Intel® Stratix® 10 Embedded Memory Overview 2. Intel® Stratix® 10 Embedded Memory Architecture and Features 3. Intel® Stratix® 10 Embedded Memory Design Considerations 4. Intel® Stratix® 10 Embedded Memory IP References 5. Intel Stratix 10 Embedded Memory Design Example 6. Intel® Stratix® 10 Embedded Memory User Guide Archives 7. Document Revision History for the Intel® Stratix® 10 Embedded Memory User Guide
1. Intel® Stratix® 10 Embedded Memory Overview x
1.1. Intel® Stratix® 10 Embedded Memory Features
2. Intel® Stratix® 10 Embedded Memory Architecture and Features x
2.1. Byte Enable in Intel® Stratix® 10 Embedded Memory Blocks 2.2. Address Clock Enable Support 2.3. Asynchronous Clear and Synchronous Clear 2.4. Memory Blocks Error Correction Code Support 2.5. Force-to-Zero 2.6. Coherent Read Memory 2.7. Freeze Logic 2.8. True Dual Port Dual Clock Emulator 2.9. 'X' Propagation Support in Simulation 2.10. Intel® Stratix® 10 Supported Embedded Memory IPs 2.11. Intel® Stratix® 10 Embedded Memory Clocking Modes 2.12. Intel® Stratix® 10 Embedded Memory Configurations 2.13. Initial Value of Read and Write Address Registers
2.1. Byte Enable in Intel® Stratix® 10 Embedded Memory Blocks x
2.1.1. Byte Enable Controls 2.1.2. Data Byte Output 2.1.3. Byte Enable Behavior
2.4. Memory Blocks Error Correction Code Support x
2.4.1. Parity Bit 2.4.2. ECC Parity Flip 2.4.3. ECC Read-During-Write Behavior 2.4.4. Error Correction Code Truth Table
2.6. Coherent Read Memory x
2.6.1. Forwarding Logic
2.11. Intel® Stratix® 10 Embedded Memory Clocking Modes x
2.11.1. Single Clock Mode 2.11.2. Read/Write Clock Mode 2.11.3. Input/Output Clock Mode 2.11.4. Asynchronous/Synchronous Clears in Clocking Modes 2.11.5. Output Read Data in Simultaneous Read/Write 2.11.6. Independent Clock Enables in Clocking Modes
2.12. Intel® Stratix® 10 Embedded Memory Configurations x
2.12.1. Mixed-Width Port Configurations
3. Intel® Stratix® 10 Embedded Memory Design Considerations x
3.1. Consider the Memory Block Selection 3.2. Consider the Concurrent Read Behavior 3.3. Customize Read-During-Write Behavior 3.4. Consider Power-Up State and Memory Initialization 3.5. Reduce Power Consumption 3.6. Avoid Providing Non-Deterministic Input 3.7. Avoid Changing Clock Signals and Other Control Signals Simultaneously 3.8. Including the Reset Release Intel® FPGA IP in Your Design 3.9. Resource and Timing Optimization Feature in MLAB Blocks 3.10. Consider the Memory Depth Setting
3.3. Customize Read-During-Write Behavior x
3.3.1. Same-Port Read-During-Write Mode 3.3.2. Mixed-Port Read-During-Write Mode
4. Intel® Stratix® 10 Embedded Memory IP References x
4.1. On Chip Memory RAM and ROM Intel® FPGA IPs 4.2. eSRAM Intel® FPGA IP 4.3. FIFO Intel® FPGA IP 4.4. FIFO2 Intel® FPGA IP 4.5. Shift Register (RAM-based) Intel® FPGA IP
4.1. On Chip Memory RAM and ROM Intel® FPGA IPs x
4.1.1. Release Information for RAM and ROM Intel® FPGA IPs 4.1.2. RAM: 1-PORT Intel® FPGA IP Parameters 4.1.3. RAM: 2-PORT Intel® FPGA IP Parameters 4.1.4. RAM: 4-PORT Intel® FPGA IP Parameters 4.1.5. ROM: 1-PORT Intel® FPGA IP Parameters 4.1.6. ROM: 2-PORT Intel® FPGA IP Parameters 4.1.7. RAM and ROM Interface Signals 4.1.8. Changing Parameter Settings Manually
4.1.8. Changing Parameter Settings Manually x
4.1.8.1. RAM and ROM Parameter Settings
4.2. eSRAM Intel® FPGA IP x
4.2.1. Release Information for eSRAM Intel® FPGA IP 4.2.2. eSRAM System Features 4.2.3. eSRAM Intel® FPGA IP Parameters 4.2.4. eSRAM Intel® FPGA IP Interface Signals 4.2.5. eSRAM Intel® FPGA IP Simulation Walk-Through 4.2.6. eSRAM Timing Diagrams
4.2.2. eSRAM System Features x
4.2.2.1. eSRAM Specifications 4.2.2.2. eSRAM Usage Model
4.3. FIFO Intel® FPGA IP x
4.3.1. Release Information for FIFO Intel® FPGA IP 4.3.2. Configuration Methods 4.3.3. Specifications 4.3.4. FIFO Functional Timing Requirements 4.3.5. SCFIFO ALMOST_EMPTY Functional Timing 4.3.6. FIFO Output Status Flag and Latency 4.3.7. FIFO Metastability Protection and Related Options 4.3.8. FIFO Synchronous Clear and Asynchronous Clear Effect 4.3.9. SCFIFO and DCFIFO Show-Ahead Mode 4.3.10. Different Input and Output Width 4.3.11. DCFIFO Timing Constraint Setting 4.3.12. Coding Example for Manual Instantiation 4.3.13. Design Example 4.3.14. Gray-Code Counter Transfer at the Clock Domain Crossing 4.3.15. Guidelines for Embedded Memory ECC Feature 4.3.16. FIFO Intel® FPGA IP Parameters 4.3.17. Reset Scheme
4.3.3. Specifications x
4.3.3.1. Verilog HDL Prototype 4.3.3.2. VHDL Component Declaration 4.3.3.3. VHDL LIBRARY-USE Declaration 4.3.3.4. FIFO Signals 4.3.3.5. FIFO Parameter Settings
4.3.8. FIFO Synchronous Clear and Asynchronous Clear Effect x
4.3.8.1. Recovery and Removal Timing Violation Warnings when Compiling a DCFIFO
4.3.11. DCFIFO Timing Constraint Setting x
4.3.11.1. Embedded Timing Constraint 4.3.11.2. User Configurable Timing Constraint
4.3.11.2. User Configurable Timing Constraint x
4.3.11.2.1. SDC Commands
4.4. FIFO2 Intel® FPGA IP x
4.4.1. Release Information for FIFO2 Intel® FPGA IP 4.4.2. Configuration Methods 4.4.3. Fmax Target Measuring Methodology 4.4.4. Performance Considerations 4.4.5. FIFO2 Intel® FPGA IP Features 4.4.6. FIFO2 Intel® FPGA IP Parameters 4.4.7. FIFO2 Intel® FPGA IP Interface Signals 4.4.8. Reset and Clock Schemes
4.4.5. FIFO2 Intel® FPGA IP Features x
4.4.5.1. FIFO2 Specifications
4.4.6. FIFO2 Intel® FPGA IP Parameters x
4.4.6.1. FIFO2 Parameter Settings
4.4.7. FIFO2 Intel® FPGA IP Interface Signals x
4.4.7.1. SCFIFO Signals 4.4.7.2. DCFIFO Signals
4.4.8. Reset and Clock Schemes x
4.4.8.1. Clock Domains 4.4.8.2. Reset
4.4.8.2. Reset x
4.4.8.2.1. FIFO2 Intel® FPGA IP Reset Guidelines
4.5. Shift Register (RAM-based) Intel® FPGA IP x
4.5.1. Release Information for Shift Register (RAM-based) Intel® FPGA IP 4.5.2. Shift Register (RAM-based) Intel® FPGA IP Features 4.5.3. Shift Register (RAM-based) Intel® FPGA IP General Description 4.5.4. Shift Register (RAM-based) Intel® FPGA IP Parameter Settings 4.5.5. Shift Register Ports and Parameters Setting
5. Intel Stratix 10 Embedded Memory Design Example x
5.1. FIFO and FIFO2 Design Example
5.1. FIFO and FIFO2 Design Example x
5.1.1. Generating the Design Example 5.1.2. Simulating the Design Example
5.1.2. Simulating the Design Example x
5.1.2.1. Simulation Results
1. Intel® Stratix® 10 Embedded Memory Overview
2. Intel® Stratix® 10 Embedded Memory Architecture and Features
3. Intel® Stratix® 10 Embedded Memory Design Considerations
4. Intel® Stratix® 10 Embedded Memory IP References
5. Intel Stratix 10 Embedded Memory Design Example
6. Intel® Stratix® 10 Embedded Memory User Guide Archives
7. Document Revision History for the Intel® Stratix® 10 Embedded Memory User Guide

4.2.2. eSRAM System Features

An eSRAM system provides features for handling simultaneous read and write requests, ensuring data integrity and coherency, and maximizing power efficiency.

A given eSRAM system can achieve a maximum frequency of 750 MHz. The number of available eSRAM systems depends on the Intel® Stratix® 10 device in use.

Every memory channel within an eSRAM system has one write port and one read port, which can handle simultaneous read and write requests. Each channel has access to only its own banks, thus ensuring that each channel is independent from its neighbors.

The eSRAM system has an error correction code (ECC) which you can enable at the cost of some user-accessible data capacity. The ECC can improve data integrity by encoding write data with extended Hamming code and decoding read data for Single-bit Error Correction, Double-bit Error Detection (SECDED). Write latency and read latency are the same whether ECC is enabled or not.

There is a data coherency feature called Write Forwarding which you can enable to handle simultaneous write and read access to the same eSRAM memory location. The write data on the write port is forwarded to the read port and not read from the targeted SRAM bank. The write data is still written into the targeted eSRAM bank.

A low power mode can conserve static power at the cost of 1 clock cycle. In addition, each channel can power down unused banks, for additional power savings.

The eSRAM system includes a PLL which natively drives the clock domains necessary for eSRAM operation.


Section Content
eSRAM Specifications
eSRAM Usage Model

Level Two Title