Agilex™ 7 Embedded Memory User Guide

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ID 683241
Date 3/29/2024
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Document Table of Contents
Document Table of Contents x
1. Agilex™ 7 Embedded Memory Overview 2. Agilex™ 7 Embedded Memory Architecture and Features 3. Agilex™ 7 Embedded Memory Design Considerations 4. Agilex™ 7 Embedded Memory IP References 5. Agilex™ 7 Embedded Memory Debugging 6. Agilex™ 7 Embedded Memory User Guide Archives 7. Document Revision History for the Agilex™ 7 Embedded Memory User Guide
1. Agilex™ 7 Embedded Memory Overview x
1.1. Agilex™ 7 Embedded Memory Features
2. Agilex™ 7 Embedded Memory Architecture and Features x
2.1. Fabric Network-On-Chip (NoC) in Agilex™ 7 M-Series M20K Blocks 2.2. Byte Enable in Agilex™ 7 Embedded Memory Blocks 2.3. Address Clock Enable Support 2.4. Asynchronous Clear and Synchronous Clear 2.5. Memory Blocks Error Correction Code (ECC) Support 2.6. Agilex™ 7 Embedded Memory Clocking Modes 2.7. Agilex™ 7 Embedded Memory Configurations 2.8. Force-to-Zero 2.9. Coherent Read Memory 2.10. Freeze Logic 2.11. True Dual Port Dual Clock Emulator 2.12. Initial Value of Read and Write Address Registers 2.13. Timing/Power Optimization Feature in M20K Blocks 2.14. Agilex™ 7 Supported Embedded Memory IPs
2.2. Byte Enable in Agilex™ 7 Embedded Memory Blocks x
2.2.1. Byte Enable Controls 2.2.2. Data Byte Output 2.2.3. Byte Enable Behavior
2.5. Memory Blocks Error Correction Code (ECC) Support x
2.5.1. Parity Bit 2.5.2. ECC Parity Flip 2.5.3. ECC Read-During-Write Behavior 2.5.4. Error Correction Code Truth Table
2.6. Agilex™ 7 Embedded Memory Clocking Modes x
2.6.1. Single Clock Mode 2.6.2. Read/Write Clock Mode 2.6.3. Input/Output Clock Mode 2.6.4. Asynchronous/Synchronous Clears in Clocking Modes 2.6.5. Output Read Data in Simultaneous Read/Write 2.6.6. Independent Clock Enables in Clocking Modes
2.7. Agilex™ 7 Embedded Memory Configurations x
2.7.1. Mixed-Width Port Configurations
2.9. Coherent Read Memory x
2.9.1. Forwarding Logic
3. Agilex™ 7 Embedded Memory Design Considerations x
3.1. Consider the Memory Block Selection 3.2. Consider the Concurrent Read Behavior 3.3. Customize Read-During-Write Behavior 3.4. Consider Power-Up State and Memory Initialization 3.5. Reduce Power Consumption 3.6. Avoid Providing Non-Deterministic Input 3.7. Avoid Changing Clock Signals and Other Control Signals Simultaneously 3.8. Advanced Settings in Quartus® Prime Software for Memory 3.9. Consider the Memory Depth Setting 3.10. M20K Embedded Memory Block Input Clock Quality Requirement 3.11. Consider Registering the Memory Output
3.3. Customize Read-During-Write Behavior x
3.3.1. Same-Port Read-During-Write Mode 3.3.2. Mixed-Port Read-During-Write Mode
4. Agilex™ 7 Embedded Memory IP References x
4.1. On Chip Memory RAM and ROM Intel® FPGA IP Cores 4.2. eSRAM Agilex™ FPGA IP 4.3. FIFO Intel® FPGA IP 4.4. Shift Register (RAM-based) Intel® FPGA IP
4.1. On Chip Memory RAM and ROM Intel® FPGA IP Cores x
4.1.1. Release Information for RAM and ROM Intel® FPGA IPs 4.1.2. RAM: 1-PORT Intel® FPGA IP Parameters 4.1.3. RAM: 2-PORT Intel® FPGA IP Parameters 4.1.4. RAM: 4-PORT Intel® FPGA IP Parameters 4.1.5. ROM: 1-PORT Intel® FPGA IP Parameters 4.1.6. ROM: 2-PORT Intel® FPGA IP Parameters 4.1.7. Changing Parameter Settings Manually 4.1.8. RAM and ROM Interface Signals
4.1.7. Changing Parameter Settings Manually x
4.1.7.1. RAM and ROM Parameter Settings
4.2. eSRAM Agilex™ FPGA IP x
4.2.1. Release Information for eSRAM Agilex™ FPGA IP 4.2.2. eSRAM System Features 4.2.3. eSRAM Agilex™ FPGA IP Parameters 4.2.4. eSRAM Agilex™ FPGA IP Interface Signals 4.2.5. eSRAM Timing Diagrams
4.2.2. eSRAM System Features x
4.2.2.1. eSRAM Specifications
4.3. FIFO Intel® FPGA IP x
4.3.1. Release Information for FIFO Intel® FPGA IP 4.3.2. Configuration Methods 4.3.3. Specifications 4.3.4. FIFO Functional Timing Requirements 4.3.5. SCFIFO ALMOST_EMPTY Functional Timing 4.3.6. FIFO Output Status Flag and Latency 4.3.7. FIFO Metastability Protection and Related Options 4.3.8. FIFO Synchronous Clear and Asynchronous Clear Effect 4.3.9. SCFIFO and DCFIFO Show-Ahead Mode 4.3.10. Different Input and Output Width 4.3.11. DCFIFO Timing Constraint Setting 4.3.12. Coding Example for Manual Instantiation 4.3.13. Design Example 4.3.14. Gray-Code Counter Transfer at the Clock Domain Crossing 4.3.15. Guidelines for Embedded Memory ECC Feature 4.3.16. FIFO Intel® FPGA IP Parameters 4.3.17. Reset Scheme
4.3.3. Specifications x
4.3.3.1. Verilog HDL Prototype 4.3.3.2. VHDL Component Declaration 4.3.3.3. VHDL LIBRARY-USE Declaration 4.3.3.4. HDL Code from Parameterizable Macros Template 4.3.3.5. FIFO Signals 4.3.3.6. FIFO Parameter Settings
4.3.8. FIFO Synchronous Clear and Asynchronous Clear Effect x
4.3.8.1. Recovery and Removal Timing Violation Warnings when Compiling a DCFIFO
4.3.11. DCFIFO Timing Constraint Setting x
4.3.11.1. Embedded Timing Constraint 4.3.11.2. User Configurable Timing Constraint
4.3.11.2. User Configurable Timing Constraint x
4.3.11.2.1. SDC Commands
4.4. Shift Register (RAM-based) Intel® FPGA IP x
4.4.1. Release Information for Shift Register (RAM-based) Intel® FPGA IP 4.4.2. Shift Register (RAM-based) Intel® FPGA IP Features 4.4.3. Shift Register (RAM-based) Intel® FPGA IP General Description 4.4.4. Shift Register (RAM-based) Intel® FPGA IP Parameter Settings 4.4.5. Shift Register Ports and Parameters Setting
1. Agilex™ 7 Embedded Memory Overview
2. Agilex™ 7 Embedded Memory Architecture and Features
3. Agilex™ 7 Embedded Memory Design Considerations
4. Agilex™ 7 Embedded Memory IP References
5. Agilex™ 7 Embedded Memory Debugging
6. Agilex™ 7 Embedded Memory User Guide Archives
7. Document Revision History for the Agilex™ 7 Embedded Memory User Guide

4.2.2. eSRAM System Features

An eSRAM system provides features for handling simultaneous read and write requests, ensuring data integrity and coherency, and maximizing power efficiency.

A given eSRAM system can achieve a maximum frequency of 750 MHz. The number of available eSRAM systems depends on the Agilex™ 7 device in use.

Every memory port within an eSRAM system has one write port and one read port, which can handle simultaneous read and write requests. Each port has access to only its own banks, thus ensuring that each port is independent from its neighbors.

The eSRAM system has an error correction code (ECC) which is always enabled at the cost of some user-accessible data capacity. The ECC can improve data integrity by encoding write data with extended Hamming code and decoding read data for Single-bit Error Correction, Double-bit Error Detection (SECDED).

There is a data coherency feature called Write Forwarding which you can enable to handle simultaneous write and read access to the same eSRAM memory location. The write data on the write port is forwarded to the read port and not read from the targeted SRAM bank. The write data is still written into the targeted eSRAM bank.


Section Content
eSRAM Specifications

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