| Technology |
55 nm TSMC Embedded Flash (Flash + SRAM) process technology |
| Packaging |
- Low cost, small form factor packages—support multiple packaging technologies and pin pitches
- Multiple device densities with compatible package footprints for seamless migration between different device densities
- RoHS6-compliant
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| Core architecture |
- 4-input look-up table (LUT) and single register logic element (LE)
- LEs arranged in logic array block (LAB)
- Embedded RAM and user flash memory
- Clocks and PLLs
- Embedded multiplier blocks
- General purpose I/Os
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| Internal memory blocks |
- M9K—9 kilobits (Kb) memory blocks
- Cascadable blocks to create RAM, dual port, and FIFO functions
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| User flash memory (UFM) |
- User accessible non-volatile storage
- High speed operating frequency
- Large memory size
- High data retention
- Multiple interface option
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| Embedded multiplier blocks |
- One 18 × 18 or two 9 × 9 multiplier modes
- Cascadable blocks enabling creation of filters, arithmetic functions, and image processing pipelines
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| ADC |
- 12-bit successive approximation register (SAR) type
- Up to 17 analog inputs
- Cumulative speed up to 1 million samples per second ( MSPS)
- Integrated temperature sensing capability
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| Clock networks |
- Global clocks support
- High speed frequency in clock network
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| Internal oscillator |
Built-in internal ring oscillator |
| PLLs |
- Analog-based
- Low jitter
- High precision clock synthesis
- Clock delay compensation
- Zero delay buffering
- Multiple output taps
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| General-purpose I/Os (GPIOs) |
- Multiple I/O standards support
- On-chip termination (OCT)
- Up to 720 megabits per second (Mbps) LVDS receiver and transmitter
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| External memory interface (EMIF) 1 |
Supports up to 600 Mbps external memory interfaces:
- DDR3, DDR3L, DDR2, LPDDR2 (on 10M16, 10M25, 10M40, and 10M50.)
- SRAM (Hardware support only)
Note: For 600 Mbps performance, –6 device speed grade is required. Performance varies according to device grade (commercial, industrial, or automotive) and device speed grade (–6 or –7). Refer to the MAX® 10 FPGA Device Datasheet or External Memory Interface Spec Estimator for more details.
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| Configuration |
- Internal configuration
- JTAG
- Advanced Encryption Standard (AES) 128-bit encryption and compression options
- Flash memory data retention of 20 years at 85 °C
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| Flexible power supply schemes |
- Single- and dual-supply device options
- Dynamically controlled input buffer power down
- Sleep mode for dynamic power reduction
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