External Memory Interface Handbook Volume 1: Intel® FPGA Memory Solution Introduction and Design Flow: For UniPHY-based Device Families

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ID 710283
Date 3/06/2023
Public
Document Table of Contents
Document Table of Contents x
1. Introduction to this Handbook 2. Recommended Design Flow 3. Selecting Your Memory 4. Selecting Your FPGA Device
1. Introduction to this Handbook x
1.1. Introduction to Memory Solutions 1.2. Protocol Support Matrix 1.3. Document Revision History
2. Recommended Design Flow x
2.1. Getting Started With External Memory Interfaces 2.2. Document Revision History
2.1. Getting Started With External Memory Interfaces x
2.1.1. Selecting Your External Memory Device 2.1.2. Selecting Your FPGA 2.1.3. Planning Your Pin Requirements 2.1.4. Planning Your FPGA Resources 2.1.5. Determining Your Board Layout 2.1.6. Specifying Parameters for Your External Memory Interface 2.1.7. Performing Functional Simulation 2.1.8. Adding Design Constraints 2.1.9. Compiling Your Design and Verifying Timing 2.1.10. Verifying and Debugging External Memory Interface Operation
3. Selecting Your Memory x
3.1. DDR SDRAM Features 3.2. DDR2 SDRAM Features 3.3. DDR3 SDRAM Features 3.4. QDR, QDR II, and QDR II+ SRAM Features 3.5. RLDRAM II and RLDRAM 3 Features 3.6. LPDDR2 Features 3.7. Memory Selection 3.8. Example of High-Speed Memory in Embedded Processor 3.9. Example of High-Speed Memory in Telecom 3.10. Document Revision History
4. Selecting Your FPGA Device x
4.1. Memory Standards 4.2. I/O Interfaces 4.3. Wraparound Interfaces 4.4. Read and Write Leveling 4.5. Dynamic OCT 4.6. Device Settings Selection 4.7. Document Revision History
4.6. Device Settings Selection x
4.6.1. Device Speed Grade 4.6.2. Device Operating Temperature 4.6.3. Device Package Size 4.6.4. Device Density and I/O Pin Counts
1. Introduction to this Handbook
2. Recommended Design Flow
3. Selecting Your Memory
4. Selecting Your FPGA Device

4.3. Wraparound Interfaces

For maximum performance, Intel® recommends that data groups for external memory interfaces should always be within the same side of a device, ideally reside within a single bank.

High-speed memory interfaces using top or bottom I/O bank versus left or right I/O bank have different timing characteristics, so the timing margins are also different. However, Intel® can support interfaces with wraparound data groups that wrap around a corner of the device between vertical and horizontal I/O banks at some speeds. Some devices support wraparound interfaces that run at the same speed as row or column interfaces.

Arria II GX devices can support wraparound interface across all sides of devices that are not used for transceivers. Other UniPHY-supported Intel® devices support only interfaces with data groups that wrap around a corner of the device.

Level Two Title