22.214.171.124. Single-Clock Synchronous RAM with Old Data Read-During-Write Behavior
The read-during-write behavior in these examples is to read the old data at the memory address. For best performance in MLAB memories, use the appropriate attribute so that your design does not depend on the read data during a write operation. The simple dual-port RAM code samples map directly into Intel synchronous memory.
Single-port versions of memory blocks (that is, using the same read address and write address signals) allow better RAM utilization than dual-port memory blocks, depending on the device family. Refer to the appropriate device handbook for recommendations on your target device.
Verilog HDL Single-Clock, Simple Dual-Port Synchronous RAM with Old Data Read-During-Write Behavior
module single_clk_ram( output reg [7:0] q, input [7:0] d, input [4:0] write_address, read_address, input we, clk ); reg [7:0] mem [31:0]; always @ (posedge clk) begin if (we) mem[write_address] <= d; q <= mem[read_address]; // q doesn't get d in this clock cycle end endmodule
VHDL Single-Clock, Simple Dual-Port Synchronous RAM with Old Data Read-During-Write Behavior
LIBRARY ieee; USE ieee.std_logic_1164.all; ENTITY single_clock_ram IS PORT ( clock: IN STD_LOGIC; data: IN STD_LOGIC_VECTOR (7 DOWNTO 0); write_address: IN INTEGER RANGE 0 to 31; read_address: IN INTEGER RANGE 0 to 31; we: IN STD_LOGIC; q: OUT STD_LOGIC_VECTOR (7 DOWNTO 0) ); END single_clock_ram; ARCHITECTURE rtl OF single_clock_ram IS TYPE MEM IS ARRAY(0 TO 31) OF STD_LOGIC_VECTOR(7 DOWNTO 0); SIGNAL ram_block: MEM; BEGIN PROCESS (clock) BEGIN IF (rising_edge(clock)) THEN IF (we = '1') THEN ram_block(write_address) <= data; END IF; q <= ram_block(read_address); -- VHDL semantics imply that q doesn't get data -- in this clock cycle END IF; END PROCESS; END rtl;
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