1. MAX® 10 External Memory Interface Overview
2. MAX® 10 External Memory Interface Architecture and Features
3. MAX® 10 External Memory Interface Design Considerations
4. MAX® 10 External Memory Interface Implementation Guides
5. UniPHY IP References for MAX® 10 Devices
6. MAX® 10 External Memory Interface User Guide Archives
7. Document Revision History for the MAX® 10 External Memory Interface User Guide
2.1. MAX® 10 I/O Banks for External Memory Interface
2.2. MAX® 10 DQ/DQS Groups
2.3. MAX® 10 External Memory Interfaces Maximum Width
2.4. MAX® 10 Memory Controller
2.5. MAX® 10 External Memory Read Datapath
2.6. MAX® 10 External Memory Write Datapath
2.7. MAX® 10 Address/Command Path
2.8. MAX® 10 PHY Clock (PHYCLK) Network
2.9. Phase Detector for VT Tracking
2.10. On-Chip Termination
2.11. Phase-Locked Loop
2.12. MAX® 10 Low Power Feature
2.9. Phase Detector for VT Tracking
There may be variations in the read and write paths caused by voltage and temperature changes. The phase detector keeps track of the variation of the mimic clock to optimize the system timing.
Figure 8. VT Tracking System Overview
In the MAX® 10 external memory interface solution, the memory clocks are used to mimic the read and write paths. The memory clock pins loop back to the phase detector as a mimic clock. The phase detector provides any variation of the mimic clock to the sequencer. The sequencer adjusts the read capture clock to match the clock phase change.