MAX® 10 External Memory Interface User Guide

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ID 683087
Date 3/17/2025
Public
Document Table of Contents
Document Table of Contents x
1. MAX® 10 External Memory Interface Overview 2. MAX® 10 External Memory Interface Architecture and Features 3. MAX® 10 External Memory Interface Design Considerations 4. MAX® 10 External Memory Interface Implementation Guides 5. UniPHY IP References for MAX® 10 Devices 6. MAX® 10 External Memory Interface User Guide Archives 7. Document Revision History for the MAX® 10 External Memory Interface User Guide
1. MAX® 10 External Memory Interface Overview x
1.1. MAX® 10 External Memory Interface Support and Performance
2. MAX® 10 External Memory Interface Architecture and Features x
2.1. MAX® 10 I/O Banks for External Memory Interface 2.2. MAX® 10 DQ/DQS Groups 2.3. MAX® 10 External Memory Interfaces Maximum Width 2.4. MAX® 10 Memory Controller 2.5. MAX® 10 External Memory Read Datapath 2.6. MAX® 10 External Memory Write Datapath 2.7. MAX® 10 Address/Command Path 2.8. MAX® 10 PHY Clock (PHYCLK) Network 2.9. Phase Detector for VT Tracking 2.10. On-Chip Termination 2.11. Phase-Locked Loop 2.12. MAX® 10 Low Power Feature
2.5. MAX® 10 External Memory Read Datapath x
2.5.1. DDR Input Registers
2.6. MAX® 10 External Memory Write Datapath x
2.6.1. DDR Output Registers
3. MAX® 10 External Memory Interface Design Considerations x
3.1. MAX® 10 DDR2 and DDR3 Design Considerations 3.2. LPDDR2 Design Considerations 3.3. Guidelines: DDR3, DDR2, and LPDDR2 External Memory Interface I/O Limitation 3.4. Guidelines: Board Design Requirement for DDR2, DDR3, and LPDDR2 3.5. Guidelines: Reading the MAX® 10 Pin-Out Files
3.1. MAX® 10 DDR2 and DDR3 Design Considerations x
3.1.1. DDR2/DDR3 External Memory Interface Pins 3.1.2. DDR2/DDR3 Recommended Termination Schemes for MAX® 10 Devices
3.1.1. DDR2/DDR3 External Memory Interface Pins x
3.1.1.1. MAX® 10 Data and Data Clock (Data Strobe) Pins 3.1.1.2. Data Mask Pins 3.1.1.3. DDR2/DDR3 Error Correction Coding Pins 3.1.1.4. DDR2/DDR3 Address and Control/Command Pins 3.1.1.5. Memory Clock Pins
3.1.1.1. MAX® 10 Data and Data Clock (Data Strobe) Pins x
3.1.1.1.1. MAX® 10 I/O Bank DQ/DQS Support for DDR2/DDR3
3.2. LPDDR2 Design Considerations x
3.2.1. LPDDR2 External Memory Interface Pins 3.2.2. LPPDDR2 Power Supply Variation Constraint 3.2.3. LPDDR2 Recommended Termination Schemes for MAX® 10 Devices
3.2.1. LPDDR2 External Memory Interface Pins x
3.2.1.1. MAX® 10 Data and Data Clock (Data Strobe) Pins 3.2.1.2. Data Mask Pins 3.2.1.3. LPDDR2 Address and Control/Command Pins 3.2.1.4. Memory Clock Pins
3.2.1.1. MAX® 10 Data and Data Clock (Data Strobe) Pins x
3.2.1.1.1. MAX® 10 I/O Bank DQ/DQS Support for LPDDR2
4. MAX® 10 External Memory Interface Implementation Guides x
4.1. UniPHY IP Core 4.2. LPDDR2 External Memory Interface Implementation 4.3. DDR2 and DDR3 External Memory Interface Implementation
4.2. LPDDR2 External Memory Interface Implementation x
4.2.1. Supported LPDDR2 Topology
4.3. DDR2 and DDR3 External Memory Interface Implementation x
4.3.1. MAX® 10 Supported DDR2 or DDR3 Topology
5. UniPHY IP References for MAX® 10 Devices x
5.1. UniPHY Parameter Settings for MAX® 10
5.1. UniPHY Parameter Settings for MAX® 10 x
5.1.1. UniPHY Parameters—PHY Settings 5.1.2. UniPHY Parameters—Memory Parameters 5.1.3. UniPHY Parameters—Memory Timing 5.1.4. UniPHY Parameters—Board Settings 5.1.5. UniPHY Parameters—Controller Settings 5.1.6. UniPHY Parameters—Diagnostics
1. MAX® 10 External Memory Interface Overview
2. MAX® 10 External Memory Interface Architecture and Features
3. MAX® 10 External Memory Interface Design Considerations
4. MAX® 10 External Memory Interface Implementation Guides
5. UniPHY IP References for MAX® 10 Devices
6. MAX® 10 External Memory Interface User Guide Archives
7. Document Revision History for the MAX® 10 External Memory Interface User Guide

2.5. MAX® 10 External Memory Read Datapath

In MAX® 10 devices, instead of using DQS strobes, the memory interface solution uses internal read capture clock to capture data directly in the double data rate I/O (DDIO) registers in the I/O elements.
  • The PLL supplies memory clock to the DRAM device and generates read capture clock that is frequency-locked to the incoming data stream. The read capture clock and the incoming read data stream have an arbitrary phase relationship.
  • For maximum timing margin, calibration sequence is used to position the read capture clock within the optimum sampling position in the read data eye.
  • Data is captured directly in the DDIO registers implemented in the I/O periphery.

Section Content
DDR Input Registers

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