AN 500: NAND Flash Memory Interface with Altera MAX Series

ID 683829
Date 9/22/2014
Public

1.1.3. AMD and Samsung NAND Flash Devices Commands

Table 3.  AMD NAND Flash Device (Am30LV0064D) CommandsThis table lists the various commands supported by the AMD NAND Flash device (Am30LV0064D).
Operation Cycle 1 Cycle 2 Valid During Busy Comment
Read data 00h/01h No
Gapless Read 02h No Reads out data in a special high-performance mode to allow reading from multiple pages with only a 7 μs latency on the first page transfer.

Superset Command supported by the AMD NAND Flash device only.

Read Spare Area 50h No
Read ID 90h No
Read Status 70h Yes
Input Data 80h No Programming data into the flash array is a two step process and requires two separate command sequences to be performed. The data to be programmed must be loaded into the data registers using the Input data command sequence. After the data is loaded the Page Program command is performed to transfer the information from the data registers to the flash array.
Page Program 10h No Programming data into the flash array is a two step process and requires two separate command sequences to be performed. The data to be programmed must be loaded into the data registers using the Input data command sequence. After the data is loaded the Page Program command is performed to transfer the information from the data registers to the flash array.
Block Erase 60h D0h No A two command procedure. In the first command cycle the address of the block to be erased is issued to the device. In the second command cycle the flash device begins the erase operation when it encounters a rising edge on the WE# signal.
Erase Suspend B0h Yes Allows time critical tasks to be performed. These tasks can only be performed on the block that is not being currently erased.

Superset Command supported by the AMD NAND Flash device only.

Erase Resume D0h No Allows time critical tasks to be performed. These tasks can only be performed on the block that is not being currently erased.

Superset Command supported by the AMD NAND Flash device only.

Reset FFh Yes

Programming of the Flash device occurs on a Page basis (512 bytes + 16 bytes of spare area), whereas the erasure takes place on a Block basis (8 K byte + 256 bytes).

Table 4.  Samsung NAND Flash Device (K9F4008W0A) CommandsThis table lists the various commands supported by the Samsung NAND Flash device (K9F4008W0A).
Operation Cycle 1 Cycle 2 Valid During Busy Comment
Read Data 00h No
Read ID 90h No
Read Status 70h Yes
Frame Program 80h 10h No Frame Program is a two command procedure: Loading of the data that has to be programmed starts with the Frame Program setup command (80h). The Frame Program confirm command (10h) initiates the programming process.
Block Erase 60h D0h No Block erase is also a two command procedure: The address of the block to be erased is loaded with the Erase setup command (60h). The Flash device initiates the internal erasing process when the Erase confirm command (D0h) is loaded.
Reset FFh Yes

Programming of the flash device takes place on a Frame basis (32 bytes), whereas the erasure takes place on a block basis (4 K byte). The device also supports partial frame programming.

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