Intel Corporation unveiled a cadence of foundational technology innovations that will power its product roadmap through 2025 and beyond.
During the global “Intel Accelerated” webcast, CEO Pat Gelsinger and senior leaders from Intel’s Technology Development organization presented a range of breakthrough technologies that will accelerate the path back to process performance leadership and bolster the company’s packaging capabilities.
- Editorial: Moore’s Law – Now and in the Future
- News Release: Intel Accelerates Process and Packaging Innovations Roadmap
- Event Video: ‘Intel Accelerated’ Webcast
- Fact Sheet: Accelerating Process Innovation
- Intel Policy Blog: Intel’s Path to Manufacturing Leadership
- Quote Sheet: Accelerating Process Innovation
July 26 Event
Intel revealed one of the most detailed process and packaging technology roadmaps the company has provided, showcasing foundational innovations that will power products through 2025 and beyond. Intel updated the roadmap at Investor Meeting 2022 beyond Intel 20A.
Breakthrough Process Technologies
In addition to announcing RibbonFET, its first new transistor architecture in more than a decade, and PowerVia, an industry-first new backside power delivery method, Intel highlighted its planned swift adoption of next-generation extreme ultraviolet lithography (EUV), referred to as High Numerical Aperture EUV. Intel is positioned to receive the industry’s first High NA EUV production tool.
RibbonFET is Intel’s implementation of a gate-all-around transistor. The technology delivers faster transistor switching speeds while achieving the same drive current as multiple fins in a smaller footprint.
PowerVia is Intel’s unique industry-first implementation of backside power delivery, optimizing signal transmission by eliminating the need for power routing on the front side of the wafer.
Process Node Naming
Intel introduced a new naming structure for its process nodes, creating a clear and consistent framework to give customers a more accurate view of process nodes across the industry. Intel technologists described the following roadmap:
Intel 7 will be featured in products such as Alder Lake for client in 2021 and Sapphire Rapids for the data center, which is expected to be in production in the first quarter of 2022.
Intel 4 will be ready for production in the second half of 2022 for products shipping in 2023, including Meteor Lake for client and Granite Rapids for the data center.
Intel 3 will be ready to begin manufacturing products in the second half of 2023.
Intel 20A ushers in the angstrom era with RibbonFET and PowerVia. It is expected to ramp in 2024.
2025 and Beyond: Beyond Intel 20A, Intel 18A is already in development for early 2025 with refinements to RibbonFET that will deliver another major jump in transistor performance.
3D Packaging Innovations
With Intel’s new IDM 2.0 strategy, packaging is important to realizing the benefits of Moore’s Law. Intel provided the following insights into the company’s industry-leading advanced packaging roadmap:
EMIB (embedded multi-die interconnect bridge) continues to lead the industry as the first 2.5D embedded bridge solution. Sapphire Rapids will be the first Intel® Xeon® data center product to ship in volume with EMIB. Beyond Sapphire Rapids, the next generation of EMIB will move from a 55 micron bump pitch to 45 microns.
Foveros leverages wafer-level packaging capabilities to provide a first-of-its-kind 3D stacking solution. Meteor Lake will be the second-generation implementation of Foveros in a client product and features a bump pitch of 36 microns, tiles spanning multiple technology nodes and a thermal design power range from 5 to 125W.
Foveros Omni ushers in the next generation of Foveros technology by providing unbounded flexibility with 3D stacking technology for die-to-die interconnect and modular designs. Foveros Omni allows die disaggregation, mixing multiple top die tiles with multiple base tiles across mixed fab nodes. It is expected to be ready for volume manufacturing in 2023.
Foveros Direct moves to direct copper-to-copper bonding for low-resistance interconnects. Foveros Direct enables sub-10-micron bump pitches, providing an order of magnitude increase in the interconnect density for 3D stacking, opening new concepts for functional die partitioning. Foveros Direct is complementary to Foveros Omni and is also expected to be ready in 2023.