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3-D and III-V Transistors

In 2002, Intel announced that it had developed a novel three-dimensional design that will allow the manufacture of transistors that scale, perform, and address the current leakage problem seen in two-dimensional planar transistors. Tri-gate fully-depleted substrate transistors have a raised plateau-like gate structure with two vertical walls and a horizontal wall of gate electrode. This three-dimensional structure improves the drive current while the depleted substrate reduces the leakage current when the transistor is in the "off" state. Reducing leakage current not only helps control heat at the circuit level but also translates to increased battery life in mobile devices.

Intel's tri-gate technology surrounds the channel on three of four sides, making it significantly more power efficient than either planar or FinFET transistor technology (an alternative 3-D architecture that has been proposed by IBM and others). The efficiency of the tri-gate design is then enhanced by using both high-k gate insulators with metal gates to improve both on and off currents, and adding strained silicon for enhanced mobility (speed), further improving device performance.

In June 2006, Intel researchers announced the development of improved CMOS tri-gate (3D) transistors, which are the first to integrate high-k gate dielectrics and strained silicon to produce record drive currents and transistor efficiency.

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Intel and QinectQ

In December 2005, researchers at Intel and QinetiQ announced the development of a new, ultra-fast, yet very low power prototype transistor using indium antimonide (chemical symbol: InSb) that could form the basis of microprocessors and other logic products beginning in the second half of the next decade. The prototype transistor is much faster and consumes less power than previously announced transistors.

You can also explore the following presentations and publication links to learn more about our transistor and nanotechnologies.

Presentations

Publications