External Memory Interfaces (EMIF) IP User Guide: Agilex™ 3 FPGAs and SoCs

ID 847458
Date 7/07/2025
Public
Document Table of Contents

3.5.2. Advanced: Memory Timing Tab

The following figure shows the Advanced: Memory Timing tab.

This tab contains two groups of parameters: Overrides and Values. The tables which follow provide descriptions of the parameters on this tab.

Figure 15. Advanced Memory Timing Tab
Table 8.  Group: Advanced: Memory Timing / Overrides / JEDEC_TABLE
Parameter Name Description
JEDEC Parameter

Name of JEDEC Parameter to explicitly override; the values will be applied and appear in the list below.

Default value is

Legal values are: MEM_CL_CYC, MEM_CWL_CYC, MEM_RD_POSTAMBLE_CYC, MEM_WR_POSTAMBLE_CYC, MEM_TSR_NS, MEM_TRFCAB_NS, MEM_TRFCPB_NS, MEM_TXSR_NS, MEM_TXP_NS, MEM_TCCD_NS, MEM_TRTP_NS, MEM_TRCD_NS, MEM_TRPPB_NS, MEM_TRPAB_NS, MEM_TRAS_NS, MEM_TWR_NS, MEM_TWTR_NS, MEM_TRRD_NS, MEM_TPPD_CYC, MEM_TFAW_NS, MEM_TRC_NS, MEM_TREFW_NS, MEM_MINNUMREFSREQ, MEM_TREFI_NS, MEM_TCKE_NS, MEM_TCMDCKE_NS, MEM_TCKELCK_NS, MEM_TCSCKE_NS, MEM_TCKCKEH_NS, MEM_TCSCKEH_NS, MEM_TMRWCKEL_NS, MEM_TZQCKE_NS, MEM_TMRR_NS, MEM_TMRW_NS, MEM_TMRD_NS, MEM_TESCKE_NS, MEM_TZQCAL_NS, MEM_TZQLAT_NS, MEM_TDQSCK_MAX_NS, MEM_TDQSCK_MIN_NS, MEM_TCKCKEL_NS, MEM_TCKELCMD_NS, MEM_TCKEHCMD_NS

(Identifier: JEDEC_OVERRIDE_TABLE_PARAM_NAME)

Table 9.  Group: Advanced: Memory Timing / Values
Parameter Name Description
Read Latency

Read Latency of the memory device in clock cycles.

(Identifier: MEM_CL_CYC)

Write Latency

Write Latency in clock cycles.

(Identifier: MEM_CWL_CYC)

Read Postamble Cycles

Duration of read postamble in cycles.

(Identifier: MEM_RD_POSTAMBLE_CYC)

Write Postamble Cycles

Duration of write postamble in cycles.

(Identifier: MEM_WR_POSTAMBLE_CYC)

tSR

Minimum duration (Entry to Exit) of Self Refresh in nanoseconds.

(Identifier: MEM_TSR_NS)

tRFCab

All-Bank Refresh Cycle Time in nanoseconds.

(Identifier: MEM_TRFCAB_NS)

tRFCpb

Per-Bank Refresh Cycle Time in nanoseconds.

(Identifier: MEM_TRFCPB_NS)

tXSR

Self-Refresh Exit to Next Valid Command Delay Time in nanoseconds.

(Identifier: MEM_TXSR_NS)

tXP

Exit Power-Down to Next Valid Command Delay Time in nanoseconds.

(Identifier: MEM_TXP_NS)

tCCD

CAS-to-CAS Delay in nanoseconds.

(Identifier: MEM_TCCD_NS)

tRTP

Internal READ to PRECHARGE Command Delay Time in nanoseconds.

(Identifier: MEM_TRTP_NS)

tRCD

RAS-to-CAS Delay in nanoseconds.

(Identifier: MEM_TRCD_NS)

tRPpb

Per-Bank Precharge Time in nanoseconds.

(Identifier: MEM_TRPPB_NS)

tRPab

All-Bank Precharge Time in nanoseconds.

(Identifier: MEM_TRPAB_NS)

tRAS

Row Active Time in nanoseconds.

(Identifier: MEM_TRAS_NS)

tWR

Write Recovery Time in nanoseconds.

(Identifier: MEM_TWR_NS)

tWTR

Write-to-Read Delay in nanoseconds.

(Identifier: MEM_TWTR_NS)

tRRD

RAS-to-RAS (Active Bank-A to Active Bank-B) Delay Time in nanoseconds.

(Identifier: MEM_TRRD_NS)

tFAW

Four-bank ACTIVE window time in nanoseconds.

(Identifier: MEM_TFAW_NS)

tRC

Activate-to-Activate command period (same bank) in nanoseconds.

(Identifier: MEM_TRC_NS)

tREFW

Refresh window time in nanoseconds.

(Identifier: MEM_TREFW_NS)

Min Number of Refs Reqd

Minimum Number of Refreshes Required.

(Identifier: MEM_MINNUMREFSREQ)

tREFI

Refresh Interval Time in nanoseconds.

(Identifier: MEM_TREFI_NS)

tCKE

CKE Minimum Pulse Width time in nanoseconds.

(Identifier: MEM_TCKE_NS)

tCMDCKE

Delay from valid command to power-down-entry (CKE low) in nanoseconds.

(Identifier: MEM_TCMDCKE_NS)

tCKELCK

Valid clock requirement after power-down-entry in nanoseconds.

(Identifier: MEM_TCKELCK_NS)

tCSCKE

Valid CS requirement before power-down-entry (CKE low) in nanoseconds.

(Identifier: MEM_TCSCKE_NS)

tCKCKEH

Valid clock requirement before power-down-exit in nanoseconds.

(Identifier: MEM_TCKCKEH_NS)

tCSCKEH

Valid CS requirement before power-down-exit (CKE high) in nanoseconds.

(Identifier: MEM_TCSCKEH_NS)

tMRWCKEL

Delay from MRW command to power-down-entry (CKE low) in nanoseconds.

(Identifier: MEM_TMRWCKEL_NS)

tZQCKE

Delay from ZQCal Start command to power-down-entry (CKE low) in nanoseconds.

(Identifier: MEM_TZQCKE_NS)

tMRR

Mode Register Read Command Period Time in nanoseconds.

(Identifier: MEM_TMRR_NS)

tMRW

Mode Register Write Command Period Time in nanoseconds.

(Identifier: MEM_TMRW_NS)

tMRD

Mode Register Set Command Period Time in nanoseconds.

(Identifier: MEM_TMRD_NS)

tESCKE

Delay from SRE command to CKE Input low in nanoseconds.

(Identifier: MEM_TESCKE_NS)

tZQCAL

ZQ calibration time in nanoseconds.

(Identifier: MEM_TZQCAL_NS)

tZQLAT

ZQcal Latch time in nanoseconds.

(Identifier: MEM_TZQLAT_NS)

tDQSCK_MAX

Maximum DQS output access time from CK in nanoseconds.

(Identifier: MEM_TDQSCK_MAX_NS)

tDQSCK_MIN

Minimum DQS output access time from CK in nanoseconds.

(Identifier: MEM_TDQSCK_MIN_NS)

tCKCKEL

Clock valid requirements after power-down-entry (CKE low) in nanoseconds.

(Identifier: MEM_TCKCKEL_NS)

tCKELCMD

Valid command requirement after CKE input low in nanoseconds.

(Identifier: MEM_TCKELCMD_NS)

tCKEHCMD

Valid command requirement after CKE input high in nanoseconds.

(Identifier: MEM_TCKEHCMD_NS)