Intel Announces First 0.18-Micron Flash Chip

Intel Pushes Technology Envelope with Advanced+ Boot Block to Improve Flash Availability, Cost, Density for Internet-Enabled Mobile Phones, Other Wireless Devices

SANTA CLARA, Calif., April 24, 2000 - Intel Corporation today announced the Intel® 0.18-micron Advanced+ Boot Block flash memory, the company's first flash memory technology on 0.18-micron lithography. The product, Intel's fourth generation of its Boot Block memory family, enables next-generation security solutions by minimizing the risk of cloning and other types of fraud in digital mobile phones and Internet appliances.

The new high-speed programming of the Intel 0.18-micron Advanced+ Boot Block device also reduces manufacturing time without the need for costly external voltage switching logic. An integrated protection register and a 64-Mbit density - one of three densities planned for the product - promote cost-effective designs by eliminating the need for additional security chips or multiple flash devices.

Intel 0.18-micron Advanced+ Boot Block flash memory includes Intel® Flash Data Integrator (IFDI) software, which offers Intel's customers the flexibility of user-defined code and data sizes, with no hardware re-design required for changing system needs.

Samples of the Intel 0.18-micron Advanced+ Boot Block flash memory in 32-Mbit density are now available, with volume production slated for this fall.

Moving from 0.25 micron to 0.18 micron lithography for the Intel 0.18 micron Advanced+ Boot Block device and future flash memories enables Intel to provide more product availability, with improved costs, for a flash market that has boomed as a result of massive expansion in the wireless market segment.

Intel estimates that the advancement to 0.18-micron technology will allow OEMs to bring to market an additional 100 million handset devices in 2001.

Intel's transition from 0.25-micron to 0.18-micron flash lithography is propelled by its "Copy Exactly" methodology, a system in the fabs that allows Intel's flash memories to constantly take advantage of leading-edge technology for density and overall performance. Production of 0.18-micron flash memory has begun at Intel's fab in Santa Clara, Calif. By the end of the year, Intel fabs in Oregon, New Mexico and Colorado will also produce 0.18-micron wafers.

"Using Intel's Copy Exactly manufacturing process, we are able to quickly deliver the benefits of 0.18-micron technology at a time when the market is ready for smaller, denser and more cost-effective flash solutions," said Mike Williams, marketing director of Intel's Flash Products Group.

Flash in the Booming Wireless Market Segment
Flash memory technology was the fastest growing memory product in 1999, according to the Semiconductor Industry Association (SIA). SIA stated demand for flash grew 63 percent to $4.1 billion in 1999, and is projected to grow 34 percent to $5.5 billion in 2000 and 20 percent to $6.6 billion in 2001.

"Flash memory is in big demand now because it enables wireless appliance manufacturers to increase their product's functionality," Williams said.

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