System Memory for Intel® Desktop Board DQ67EP






System memory features
The board has two DIMM sockets and supports the following memory features:

  • Two independent memory channels with interleaved mode support
  • Supports 1.2V–1.8V DIMM memory voltage
  • Support for non-ECC, unbuffered, single-sided or double-sided DIMMs with x8 organization
  • 16 GB maximum total system memory (with 4 Gb memory technology)
  • Minimum total system memory: 1 GB using 1 Gb x8 module
  • Serial presence detect
  • DDR3 1333 MHz and DDR3 1066 MHz SDRAM DIMMs

To be fully compliant with all applicable DDR SDRAM memory specifications, the board should be populated with DIMMs that support the serial presence detect (SPD) data structure. This allows the BIOS to read the SPD data and program the chipset to accurately configure memory settings for optimum performance. If non-SPD memory is installed, the BIOS will attempt to correctly configure the memory settings, but performance and reliability may be impacted or the DIMMs may not function under the determined frequency.

1.5 V is the recommended and default setting for DDR3 memory voltage. The other memory voltage settings in the BIOS Setup program are provided for performance tuning purposes only. Altering the memory voltage may (i) reduce system stability and the useful life of the system, memory, and processor; (ii) cause the processor and other system components to fail; (iii) cause reductions in system performance; (iv) cause additional heat or other damage; and (v) affect system data integrity.

Intel has not tested and does not warranty the operation of the processor beyond its specifications. For information on the processor warranty, refer to Processor Warranty Information.

Supported memory configurations


DIMM Capacity Configuration SDRAM Density SDRAM Organization Front-side/Back-side Number of SDRAM Devices
1 GB Single-sided 1 Gbit 1 Gb x 8 / empty 8
2 GB Double-sided 1 Gbit 1 Gb x 8 / 1 Gb x 8 16
2 GB Single-sided 2 Gbit 2 Gb x 8 / empty 8
4 GB Double-sided 2 Gbit 2 Gb x 8 / 2 Gb x 8 16


Tested memory
Third-party tested memory occurs as requested by the memory vendors and is tested at an independent memory house (CMTL*—Computer Memory Test Labs) that is not a part of Intel.

The table below lists parts that passed testing during development. These part numbers may not be readily available throughout the product life cycle.


Module manufacturer Module part number Module size Module speed ECC or Non-ECC Component manufacturer Component part number
Hynix HMT112U6BFR8C-G7 1 GB 1066 MHz Non-ECC Hynix HMT112U6BFR8C-G7
Hynix HMT112U6AFP8C-H9 1 GB 1333 MHz Non-ECC Hynix HMT112U6AFP8C-H9
Hynix HMT125U7AFP8C-G7T0 2 GB 1066 MHz Non-ECC Hynix HMT125U6AFP8C-G7T0
Hynix HMT125U6BFR8C-H9 2 GB 1333 MHz Non-ECC Hynix HMT125U6BFR8C-H9
Hynix HMT351U6AFR8C-G7 4 GB 1066 MHz Non-ECC Hynix HMT351U6AFR8C-G7
Hynix HMT351U6AFR8C-H9 4 GB 1333 MHz Non-ECC Hynix HMT351U6AFR8C-H9
Micron MT8JTF12864AY-1G1D1 1 GB 1066 MHz Non-ECC Micron MT8JTF12864AY-1G1D1
Micron MT8JTF12864AY-1G4D1 1 GB 1333 MHz Non-ECC Micron MT8JTF12864AY-1G4D1
Micron MT16JTF25664AY-1G1D1 2 GB 1066 MHz Non-ECC Micron MT16JTF25664AY-1G1D1
Micron MT16JTF25664AZ-1G4F1 2 GB 1333 MHz Non-ECC Micron MT16JTF25664AZ-1G4F1
Micron MT16JTF51264AZ-1G1D1 4 GB 1066 MHz Non-ECC Micron MT16JTF51264AZ-1G1D1
Micron MT16JTF51264AZ-1G4D 4 GB 1333 MHz Non-ECC Micron MT16JTF51264AZ-1G4D
Samsung M378B2873DZ1-CF8 1 GB 1066 MHz Non-ECC Samsung M378B2873DZ1-CF8
Samsung M378B2873EH1-CH9 1 GB 1333 MHz Non-ECC Samsung M378B2873EH1-CH9
Samsung M378B5673DZ1-CF8 2 GB 1066 MHz Non-ECC Samsung M378B5673DZ1-CF8
Samsung M378B5673DZ1-CH9 2 GB 1333 MHz Non-ECC Samsung M378B5673DZ1-CH9
Samsung M378B5273BH1-CF8 4 GB 1066 MHz Non-ECC Samsung M378B5273BH1-CF8
Samsung M378B5273BH1-CF9 4 GB 1333 MHz Non-ECC Samsung M378B5273BH1-CF9