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Essentials

Performance

Reliability

Supplemental Information

Package Specifications

Advanced Technologies

Capacity Capacity
1 TB
512 GB
256 GB
Status Status
Launched
Launched
Launched
Launch Date Launch Date
04/10/2019
04/10/2019
04/10/2019
Use Conditions Use Conditions
PC/Client/Tablet
PC/Client/Tablet
PC/Client/Tablet
Sequential Read (up to) Sequential Read (up to)
2400 MB/s
2300 MB/s
1450 MB/s
Sequential Write (up to) Sequential Write (up to)
1800 MB/s
1300 MB/s
650 MB/s
Random Read (8GB Span) (up to) Random Read (8GB Span) (up to)
330000 IOPS
320000 IOPS
230000 IOPS
Random Write (8GB Span) (up to) Random Write (8GB Span) (up to)
250000 IOPS
250000 IOPS
150000 IOPS
Latency - Read Latency - Read
7 µs
7 µs
8 µs
Latency - Write Latency - Write
18 µs
18 µs
30 µs
Power - Active Power - Active
5.8W
5.8W
5.3W
Power - Idle Power - Idle
L1.2 : <13mW
L1.2 : <13mW
L1.2 : <12mW
Vibration - Operating Vibration - Operating
2.17 GRMS (5-700 Hz) Max
2.17 GRMS (5-700 Hz) Max
2.17 GRMS (5-700 Hz) Max
Vibration - Non-Operating Vibration - Non-Operating
3.13 GRMS (5-800 Hz) Max
3.13 GRMS (5-800 Hz) Max
3.13 GRMS (5-800 Hz) Max
Shock (Operating and Non-Operating) Shock (Operating and Non-Operating)
1000 G / 0.5 ms and 1500 G / 0.5 ms
1000 G / 0.5 ms and 1500 G / 0.5 ms
1000 G / 0.5 ms and 1500 G / 0.5 ms
Operating Temperature Range Operating Temperature Range
0°C to 70°C
0°C to 70°C
0°C to 70°C
Endurance Rating (Lifetime Writes) Endurance Rating (Lifetime Writes)
300 TBW
150 TBW
75TBW
Mean Time Between Failures (MTBF) Mean Time Between Failures (MTBF)
1.6 Million Hours
1.6 Million Hours
1.6 Million Hours
Uncorrectable Bit Error Rate (UBER) Uncorrectable Bit Error Rate (UBER)
< 1 sector per 10^15 bits read
< 1 sector per 10^15 bits read
< 1 sector per 10^15 bits read
Warranty Period Warranty Period
5 yrs
5 yrs
5 yrs
Description Description
Introducing the new Intel® Optane™ Memory H10 with Solid State Storage which combines two breakthrough technologies, Low-latency Intel® Optane™ technology and high-density Intel® QLC 3D NAND in a single M.2 2280 form factor.
Introducing the new Intel® Optane™ Memory H10 with Solid State Storage which combines two breakthrough technologies, Low-latency Intel® Optane™ technology and high-density Intel® QLC 3D NAND in a single M.2 2280 form factor.
Introducing the new Intel® Optane™ Memory H10 with Solid State Storage which combines two breakthrough technologies, Low-latency Intel® Optane™ technology and high-density Intel® QLC 3D NAND in a single M.2 2280 form factor.
Weight Weight
Less than 10 grams
Less than 10 grams
Less than 10 grams
Form Factor Form Factor
M.2 22 x 80mm
M.2 22 x 80mm
M.2 22 x 80mm
Interface Interface
PCIe NVMe 3.0 x4
PCIe NVMe 3.0 x4
PCIe NVMe 3.0 x4
Enhanced Power Loss Data Protection Enhanced Power Loss Data Protection
Yes
Yes
Yes
Temperature Monitoring and Logging Temperature Monitoring and Logging
Yes
Yes
Yes
End-to-End Data Protection End-to-End Data Protection
Yes
Yes
Yes
Intel® Rapid Start Technology Intel® Rapid Start Technology
Yes
Yes
Yes