Intel 18A

• Delivers up to 18% higher performance at iso power, 38% lower power at iso performance, and 30% chip density improvement versus Intel 3.
• Enables stronger voltage‑to‑frequency scaling, with production silicon demonstrating approximately 30% higher CPU frequency at ~0.5 V versus FinFET designs.
• PowerVia reduces worst‑case dynamic voltage droop by as much as 10x while enabling up to 11% block‑level area compaction in routed designs.
• RibbonFET improves electrostatic control and drive scalability, enabling higher performance per watt, lower Vmin, and more efficient scaling across operating conditions.
• Omni MIM capacitors improve power integrity and reduce voltage droop for modern compute workloads.
• In high-volume production in the United States.

Intel 18A-P

• Builds on Intel 18A with targeted enhancements, delivering over 9% higher performance at iso power or more than 18% lower power at iso performance through coordinated transistor, interconnect, and DTCO improvements.
• Improved transistor efficiency and reduced resistance deliver approximately 12% higher front end frequency at iso leakage, enabling higher performance within the same power envelope.
• Introduces new RibbonFET device options with mobility enhancements, including Power Boost dual contact transistors delivering over 10% frequency improvement at matched capacitance-neutral scaling.
• Improves scaling efficiency with 20-40% lower thermal resistivity and 10-30% lower via resistance, enabling sustained performance in power dense designs.
• Expands flexibility with additional logic Vt options and 33% tighter skew corners, enabling finer PPA tuning.
• Reduces variation with capacitance-neutral scaling, enabling predictable performance gains.

Intel 18A-PT

• Industry first base die with backside power delivery, purpose built for advanced 3DIC designs and based on Intel 18A technology.
• 3D integration capabilities, with pass-through through-silicon vias (TSVs), die-to-die TSVs, and advanced hybrid bonding interface (HBI) at industry-leading pitch for scalable multi-die system design.
• Delivers up to 25% higher density and up to 35% lower power versus Intel 3-T.
• High bandwidth scaling, with up to 9x die-to-die bandwidth density, supporting next-generation AI and HPC workloads.

PowerVia

As transistor density increases, mixed signal and power routing create congestion that can degrade performance. Intel Foundry’s industry-first PowerVia technology relocates course pitch metals and bumps to the back side of the die and embeds nano-scale through-silicon vias (nano-TSVs) in every standard cell for efficient power distribution.

RibbonFET

RibbonFET is Intel Foundry's gate-all-around transistor architecture, in which the channel is fully surrounded by the gate to enable precise electrostatic control. This structure improves control of short-channel effects and supports continued transistor scaling beyond FinFET, while enabling flexible optimization through varying ribbon widths and multiple threshold voltage options.

Intel 18A in Action

The Clearwater Forest server processor demonstrates the potential of Intel 18A in combination with Intel Foundry’s advanced packaging technologies.

Learn more