Intel Custom Foundry’s primary value proposition lies in our leadership silicon technologies. This translates into four key values that we bring to our customers:
We offer a variety of transistors spanning the full spectrum of power and performance to cover the needs of the widest variety of computing devices. These range from the most performance hungry devices in the data center to systems on chips (SOCs) that are on the strictest of power diets and everything in between. We carefully optimize technology options for our target market segments.
Decreasing cost per transistor
The complexity is increasing faster due to lithographic capability constraints resulting in increased cost. To compensate for this cost increase, our innovations have successfully produced larger-than-normal area scaling, decreasing the cost per transistor. This accelerated area scaling is a substantial advantage in cost per transistor for our foundry customers.
Faster time to market
We have consistently been about three and a half years ahead of the nearest competitor in introducing trend-setting and revolutionary transistor technologies which enable break-through power, performance, area benefits and the ability to launch products that leap ahead of competition.
Confidence in pursuit of Moore’s Law
It has been getting harder and harder to simultaneously deliver the two most important promises of Moore’s Law: improvements in performance per watt and cost per transistor. However, harder is not the same as impossible. We are increasing our efforts and continue to expect more from Moore’s Law than ever before. This determination is supported by an innovation pipeline fueled by one of the largest semiconductor research and development (R&D) budgets in the world. Our customers can confidently rely on us to meet their aggressive product roadmaps well into the future.
22 nm process
World’s first tri-gate technology offering a one generation lead in power and performance.
Our 22 nm is the only tri-gate offering at 20 or 22 nm node in the industry, with power and performance a generation ahead of competitive technology.
14 nm process
2nd generation tri-gate technology customized for high performance (GP) and low power (LP).
Our 14 nm features 4th generation Hi-K Metal Gate (HKMG), 2nd generation tri-gate transistor technology and comes in both a GP process optimized for high performance and a LP process optimized for low power.
|Process||22 nm General Purpose (GP)||14 nm GP||14 nm Low Power (LP)|
|Transistors||3 Vts||3 Vts||5 Vts|
|Libraries||Short||Short and tall||Short and tall|
|IP Portfolio||Communications infrastructure / FPGA / consumer||Communications infrastructure / FPGA||Mobile / consumer|
|Packaging||Higher performance and low cost, small form factor||Higher performance||Lower cost, small form factor|
|Design Kits||Industry standard tools / flows||Industry standard tools / flows||Industry standard tools / flows|
|I/O Device||1.2 V, 1.8 V||1.2 V, 1.8 V||1.2 V, 1.8 V|
|Memory Bitcell||High performance
This white paper examines the impact of transistor design transitions in the semiconductor manufacturing industry from traditional planar to 3-D structures, and how it will provide a significant boost in the capabilities of high-performance programmable logic.