Intel® 3D NAND Technology extends our leadership in flash memory with an architecture designed for higher capacity and optimal performance, a proven manufacturing process providing accelerated transitions and scaling, and rapid portfolio expansion for multiple market segments.
Intel introduces the world’s first PCIe* SSDs with Intel® QLC Technology. Intel® QLC 3D NAND Technology provides up to 33% high areal density1 than its 3D NAND predecessor. It also uniquely features PCIe* acceleration, to deliver a reliable mix of performance, capacity, and value-making it a smart storage solution for both datacenter and client markets.
Intel® QLC Technology leverages current 3D NAND, with a proven 64-layer structure, and adds an additional bit per cell that provides 4bits/cell (QLC), making it the world's highest-density flash memory. Additionally, this technology uses a floating gate cell because it is a reliable, low-cost storage method. Last, Intel® QLC Technology was paired with PCIe*- (NVMe*) technology, to provide up to a 4x performance benefit over SATA interfaces.2
Prepare for the future with Intel QLC-built on reliable Intel® technology and backed by Intel manufacturing leadership.
For datacenters, Intel® QLC 3D NAND Technology radically shrinks HDD system footprints.3 Fewer systems to maintain lead to power and cooling savings4, while also reducing operation and capital costs associated with drive replacements.5 And while footprint goes down, performance goes up.6 PCIe* acceleration blasts through SATA bottlenecks7, unleashing the full power of QLC. When coupled with optional Intel® Optane™ technology, Intel® 3D NAND Technology datacenter products deliver even better performance2, accelerating access to data needed most.
Do more, store more, and save more with Intel® QLC Technology featured in the Intel® SSDs D5-P4320, D5-P4326 and D5-P4420 Series-Currently shipping in limited quantities and available broadly spring, 2019.
Intel® QLC 3D NAND Technology enables consumers to tackle today’s storage needs and prepare for the growing demands of tomorrow. These client SSDs pack in more data than TLC-based storage, allowing up to 2x more capacity in identical footprints.1 Only Intel coupled this game-changing technology with PCIe* to deliver affordable PCIe performance.
Intel® 3D NAND Technology is an innovative response to the industry’s growing demand for data storage capacity. Compared to other available NAND solutions, Intel® 3D NAND Technology is designed on floating gate architecture with a smaller cell size and a highly efficient memory array, which enables higher capacity solutions and high reliability with strong protection from charge loss.
Intel® 3D NAND Technology accelerates Moore's Law into three dimensions, overcoming the capacity limitations of traditional 2D NAND technology. The vertical layering of our 3D NAND enables higher areal density today, with scalability for the future.
Intel has applied 30 years of flash cell experience to transition NAND from 2D to 3D, multi-level cell (MLC) to tri-level cell (TLC), and 32-layer to our breakthrough 64-layer technology. All of this is done to deliver the highest areal density8 and rapidly grow storage capacities in 3D NAND solutions.
With 3D NAND technology, Intel delivers innovative, high-value capabilities into a broad product portfolio. Our experience of designing this architecture into SSD solutions enables us to rapidly improve performance, power consumption, performance consistency, and reliability with each generation.
Intel is using manufacturing processes proven by decades of high volume output to build 3D NAND technology. With strong generational synergy across our factory network, Intel expects to grow 3D NAND capacity faster than the market, enabling us to deliver disruptive total cost of ownership and application acceleration to our customer base.
TLC (tri-level cell) contains 3 bits per cell and QLC (quad level cell) contains 4 bits per cell. Calculated as (4-3)/3 = 33% more bits per cell.
4 nodes vSAN Cluster – 1 node system configuration: Server model: Intel Purley S2600WF (R2208WFTZS); MB: H48104-850; CPU: Dual Intel® Xeon® Gold 6142 2.6G processor, 16C/32T, 10.4GT/s, 22M Cache, Turbo, HT (150W) DDR4-2666; Mem: 16GB RDIMM, 2666MT/s, Dual Rank x16; NICs: Intel X520-DA2 10GbE SFP+ DAC and embedded Intel X722 10GbE LAN. All TLC config: 2x Intel® SSD Data Center P4610 Series 1.6TB for caching and 4x Intel® SSD Data Center P4510 Series 4.0TB for capacity storage; Intel® Optane™ memory+QLC Config: 2x Intel® Optane™ SSD DC P4800X 375GB for caching and 2x Intel® SSD D5-P4320 7.68TB for capacity storage. 2 Workload: HCIBench: https://labs.vmware.com/flings/hcibench. Number of VMs: 16, Number of Data Disk: 8, Size of Data Disk: 60 Number of Disks to Test: 8, Working-Set Percentage: 100, Number of Threads Per Disk: 4, Block Size: 4K, Read Percentage: 70, Random Percentage: 50, Test Time: 3600. Results: P4610+P4510 config = 83,451 IOPS @ 6.3ms latency. P4800x+P43220 config = 346,644 IOPS @ 1.52ms latency.
Comparing 3.5’ 4TB WD Gold TB Enterprise class 7200 RPM HDD enabling up 24 HDDs per 2U and a total of 20U and 960TB total to 30.72TB E1.L Intel® SSD D-5 P4326 (available at a future date) enabling up to 32 per 1U and a total of 1U and 983TB total. So 20 rack units to 1 rack unit.
Power, Cooling, Consolidation cost savings. Based on HDD: 7.2K RPM 4TB HDD, AFR of 2.00% and 7.7W active power, 24 drives in 2U (1971W total power) https://www.seagate.com/files/www-content/datasheets/pdfs/exos-7-e8-data-sheet-DS1957-1-1709US-en_US.pdf SSD: 22W active power 44% AFR, 32 drives in 1U (704W total power); Cooling cost based on deployment term of 5 years with Kwh cost of $.158 and number of watts to cool 1 watt 1.20 Based on 3.5” HDD 2U 24 drives and EDSFF 1U Long 1U 32 drives. Hybrid storage based on using Intel® Transforming Learning Course(s) (Intel® TLC) SSD for cache.
Drive Replacement cost savings. Calculation: HDD 2% AFR x 256 drives x 5 years = 25.6 replacements in 5 years; SSD: 0.44% AFR x 32 drives x 5 years = 0.7 replacements in 5 years.
Compares 4K random read IOPs and Queue Depth 32 between Intel D5-P4320 SSD and Toshiba N300 HDD. 175,000 IOPS: Measured data from Intel D5-P4320 7.68TB SSD. 4K random read IOPs; Queue Depth 32. 532 IOPS: Based on Tom’s Hardware benchmarks for Toshiba N300 8TB 7.2K RPM HDD. 4K random read IOPs; Queue Depth 32: https://www.tomshardware.com/reviews/wd-red-10tb-8tb-nas-hdd,5277-2.html. Hence 4K random read IOPS are 329X better.
PCIe* IOPS based on simulated 4K random read, queue depth of 256, performance estimates conducted by Intel for the Intel D5-P4320/D5-P4326 PCIe* based QLC SSD at different capacities: 3.84TB; 7.68TB; 15.36TB, and 30.72TB. SATA IOPs set to 100K IOPs for all capacity points based on 100K IOPS being the max possible for current competitive SATA base SSDs from Micron. The Micron 5200 Series NAND Flash SSDs data sheet showing a max 4K random read QD32 IOPs of 95K IOPs for 3.84TB, and 7.68TB SKUs.
Comparing areal density of Intel measured data on 512 GB Intel® 3D NAND to representative competitors based on 2017 IEEE International Solid-State Circuits Conference papers citing Samsung Electronics and Western Digital/Toshiba die sizes for 64-stacked 3D NAND component.