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- DDR3L 1333/1066/800MHz DRAM Component Validation Results
DDR3L 1333/1066/800MHz DRAM Component Validation Results
This information is provided as a guide to component compliance. This testing is not intended to replace the normal OEM component qualification process. Intel encourages memory suppliers to validate their fastest speed/latency component. The slower speed/latency components using the same die revision as the listed fast component may not be explicitly listed in this table. This does not preclude the slower components from being submitted in memory modules for testing if the component has passed testing and has been listed in this table at the fastest speed/latency. Please contact the supplier directly to obtain information regarding the corresponding slower speed/latency parts.
| Validated DDR3L 1333/1066/800MHz SDRAM Components | ||||||
|---|---|---|---|---|---|---|
| Supplier Part Number |
Density | Width | Freq | Latency CL-tRCD-tRP |
Notes | Component Date Code |
| Elpida EDJ1104EDSE-DJ-F |
1Gb | X4 | 1333 | 9-9-9 | - | 0936 |
| Elpida EDJ1108EDSE-DJ-F |
1Gb | X8 | 1333 | 9-9-9 | - | 0927 |
| Hynix H5TC1G43BFR-G7A, ◊ |
1Gb | X4 | 1066 | 7-7-7 | - | 0918 |
| Hynix H5TC1G43BFR-H9A, ◊ |
1Gb | X4 | 1333 | 9-9-9 | - | 0933 |
| Hynix H5TC1G43TFR-H9A, ◊ |
1Gb | X4 | 1333 | 9-9-9 | - | 0946 |
| Hynix H5TC1G83BFR-G7A, ◊, ∇ |
1Gb | X8 | 1066 | 7-7-7 | - | 0911 |
| Hynix H5TC1G83BFR-H9A, ◊ |
1Gb | X8 | 1333 | 9-9-9 | - | 0933 |
| Hynix H5TC1G83TFR-H9A, ◊ |
1Gb | X8 | 1333 | 9-9-9 | - | 0946 |
| Hynix H5TC2G43AFR-G7A, ◊ |
2Gb | X4 | 1066 | 7-7-7 | - | 0917 |
| Hynix H5TC2G43AFR-H9A, ◊ |
2Gb | X4 | 1333 | 9-9-9 | - | 0930 |
| Hynix H5TC2G83AFR-G7A, ◊ |
2Gb | X8 | 1066 | 7-7-7 | - | 0910 |
| Hynix H5TC2G83AFR-H9A, ◊ |
2Gb | X8 | 1333 | 9-9-9 | - | 0930 |
| Hynix H5TC2G83BFR-H9A |
2Gb | X8 | 1333 | 9-9-9 | - | 0942 |
| Hynix H5TC4G43AMR-G7A, ◊ |
2Gb (DDP) | X4 | 1066 | 7-7-7 | - | 0930 |
| Samsung K4B1G0446E-HYF8, ◊ |
1Gb | X4 | 1066 | 7-7-7 | - | 0913 |
| Samsung K4B1G0446E-HYH9, ◊ |
1Gb | X4 | 1333 | 9-9-9 | - | 0913 |
| Samsung K4B2G0446E-MYF8, ◊ |
1Gb (DDP) | X4 | 1066 | 7-7-7 | - | 9367 |
| Samsung K4B1G0846E-HYF8, ◊ |
1Gb | X8 | 1066 | 7-7-7 | - | 0913 |
| Samsung K4B1G0846E-HYH9, ◊ |
1Gb | X8 | 1333 | 9-9-9 | - | 0913 | Samsung K4B2G0446B-HYF8, ◊ |
2Gb | X4 | 1066 | 7-7-7 | - | 0910 | Samsung K4B2G0446B-HYH9, ◊ |
2Gb | X4 | 1333 | 9-9-9 | - | 0913 |
| Samsung K4B2G0446C-HYF8, ◊ |
2Gb | X4 | 1066 | 7-7-7 | - | 0940 |
| Samsung K4B2G0446C-HYH9, ◊ |
2Gb | X4 | 1333 | 9-9-9 | - | 0940 |
| Samsung K4B2G0846B-HYF8, ◊ |
2Gb | X8 | 1066 | 7-7-7 | - | 0910 |
| Samsung K4B2G0846B-HYH9, ◊ |
2Gb | X8 | 1333 | 9-9-9 | - | 0913 |
| Samsung K4B2G0846C-HYF8, ◊ |
2Gb | X8 | 1066 | 7-7-7 | - | 0940 |
| Micron MT41K128M8JP-15E |
1Gb | X8 | 1333 | 9-9-9 | - | 0926 |
| Micron MT41K128M8JP-15F |
1Gb | X8 | 1333 | 9-9-9 | - | 0926 |
| Micron MT41K128M8JP-187E |
1Gb | X8 | 1066 | 7-7-7 | - | 0906 |
| Micron MT41K256M4JP-15E |
1Gb | X4 | 1333 | 9-9-9 | - | 0926 |
◊ Write margin testing was performed at component level by Shmoo testing for voltage and timing, based on limited sampling.
∇ Exceeds maximum VOX specification.