Poly agglomeration fuse is a reliable programmable element which may be implemented in a logic CMOS processes. This element may be programmed under nominal bias and does not introduce any collateral damage. Distribution of the post program resistance depends on silicide quality, fuse shape, doping, and programming conditions. Optimized conditions for fuse shape and programming parameters have been presented using empirical results and numerical simulations and a novel circuit has been presented for the device with a 1 in 10,000 programming yield loss for a 64 bit PROM arrays with 2 fuses per bit. Element reliability has been verified under temperatue shock and bake.
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