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Acknowledgments/References

Acknowledgments
The authors would like to acknowledge the collaborative efforts of our colleagues in the Portland Technology Development and Technology Computer Aided Design groups: T. Ghani, R. Rios, M. Stettler, M. Alavi, I. Post, S. Tyagi, R. Chau, M. Taylor, R. Nagisetty, J. Sandford, S. Ahmed, and S. Yang. The management support from R. Gasser, J. Garcia, S. Yang, L. Yau, and Y. El-Mansy is greatly appreciated.

References

[1]	M. Bohr, S.U. Ahmed, L. Brigham, R. Chau, R. Gasser, R. Green, W. Hargrove, E. Lee, R. Natter, S. Thompson, K. Weldon, and S. Yang, IEDM Technical Digest, 1994, p. 273.
[2]	M. Bohr, S.S. Ahmed, S.U. Ahmed, M. Bost, T. Ghani, J. Greason, R. Hainsey, C. Jan, P. Packan, S. Sivakumar, S. Thompson, J. Tsai, and S. Yang, IEDM Technical Digest, 1996, p. 847.
[3]	H.S. Momose, M. Ono, T. Yoshitomi, T. Ohguro, S-I. Nakamura, M. Saito, and H. Iwai, IEDM Technical Digest, 1994, p. 593.
[4]	S.A. Hareland, S. Krishnamurthy, S. Jallepalli, C.-F. Yeap, K. Hasnat, A.F. Tasch, and C.M. Maziar, IEDM Technical Digest, 1995, p. 933.
[5]	S.-H.Lo, D.A. Buchanan, Y. Taur, and W. Wang, IEEE Electron Device Letter, 1997, p. 209.
[6]	S. A. Campbell, D.C. Gilmer, X.-C. Wang, M.-T. Hsieh, H.-S. Kim, W.L. Gladfelter, and J.Yan, IEEE Electron Device, 1997, p. 104.
[7]	S. Kamiyama and T. Saeki, IEDM Technical Digest, 1991, p. 827.
[8]	C.G. Parker, G. Lucovsky, and J.R. Hauser, to be published, 1997.
[9]	H.-H. Tseng, P.G.Y. Tsui, P.J. Tobin, J. Mogab, M. Khare, X.W. Wang, T.P. Ma, R. Hegde, C.Hobbs, J.Veteran, M. Hartig, G. Kenig, V. Wang, R. Blumenthal, R. Cotton, V. Kaushik, T. Tamagawa, B.L. Halpern, G. J. Cui, and J. J. Schmitt, IEDM Technical Digest, 1997, p. 647.
[10]	S. Thompson, VLSI Symposium Technology Short Course, 1998.
[11]	M. Ono, M. Saito, T. Yoshitomi, C. Fiegna, T. Ohguro, and H. Iwai, IEDM Technical Digest, 1993, p. 119.
[12]	A. Hori, H. Nakaoka, H. Umimoto, K. Yamashita, M. Takase, N. Shimizu, B. Mizuno, and S. Odanaka, IEDM Technical Digest, 1994, p. 485.
[13]	P.A. Packan and J.D. Plummer, Applied Physics Letter, 1990, p. 1787.
[14]	D.F. Downey, C.M. Osburn, S.D. Marcus, Solid State Technology, 1997, p. 71.
[15]	D.J. Eaglesham, P.A. Stolk, H.-J. Gossmann, and J.M. Poate, Applied Physics Letter, 1994, p. 2305.
[16]	A.D. Lilak, S.K. Earles, K.S. Jones, M.E. Law, IEDM Technical Digest, 1997, p. 493.
[17]	M.E. Law and K.S. Jones, Proceedings of the Process Physics Symposium of the Electrochemical Society, 1996, p. 374.
[18]	S.E. Thompson, P.A. Packan, and M.T. Bohr, VLSI Symposium Digest, 1996, p. 154.
[19]	S. Venkatesan, J.W. Lutze, C. Lage, and W.J. Taylor, IEDM Technical Digest, 1995, p. 419.
[20]	M. Rodder, S. Aur, and I.-C. Chen, IEDM Technical Digest, 1995, p. 415.
[21]	J.B. Jacobs and D. Antoniadis, IEEE Transactions Electron Devices, 1995, p. 870.
[22]	G.G. Shahidi, J.D. Warnock, J. Comfort, S. Fischer, P.A. McFarland, A. Acovic, T.I. Chappell, B.A. Chappell, T.H. Ning, C.J. Anderson, R.H. Dennard, J.Y.C. Sun, M.R. Polcari, and B. Davari, IBM Journal Research Development, 1995, p. 229.
[23]	M. Cao, P. Griffin, P. Vande Voorde, C. Diaz, and W. Greene, VLSI Symposium Digest, 1997, p. 85.
[24]	C.T. Sah, Fundamentals of Solid-State Electronics, 1991, p. 553.
[25]	C.F. Codella and S. Ogura, IEDM Technical Digest, 1985, p. 230.
[26]	T. Hori, IEDM Technical Digest, 1994, p. 75.
[27]	Y. Taur and E.J. Nowak, IEDM Technical Digest, 1997, p. 215.
[28]	R. Chau, R. Arghavani, M. Alavi, D. Douglas, J. Greason, R. Green, S. Tyagi, J. Xu, P. Packan, S. Yu, and C. Liang, IEDM Technical Digest, 1997, p. 591.
[29]	K. Ismail, J.O. Chu, and B. S. Meyerson, Applied Physics Letter, vol. 64, 1994, p. 3124.
[30]	F. Assaderaghi, D. Sinitsky, S. Parke, J. Bokor, P.K. Ko, and C. Hu, IEDM Technical Digest, 1994, p. 809.
[31]	A. Shibata, T. Matsuoka, S. Kakimoto, H. Kotaki, M. Nakano, K. Adachi, K. Ohta, and N. Hashizume, VLSI Symposium Digest, 1998, p. 76.

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