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Conclusions

Current performance scaling trends will not continue past the 0.13 - 0.10um device technologies by using traditional scaling methods. Fundamental limits in SiO₂ scaling due to tunneling currents, in SDE junction depths due to large increases in external resistance, and in well engineering due to leakage constraints are currently being reached. At present, there is no clear alternate device architecture that has shown the potential for continuing the performance trends seen in the last 20 years. Aggressive exploration of high dielectric constant materials as well as developing a way to decrease SDE resistance offer the best hope for device and circuit improvements into the next century. These should be strongly supported.

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