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Intel's 45nm CMOS Technology
Process and Electrical Results for the On-die Interconnect Stack for Intel's 45nm Process Generation
CONCLUSION
The on-die interconnect stack for Intel's 45nm process generation delivers a 2X higher area density, a 10% lower average capacitance, and improved power distribution relative to the previous process generation. The new process also enables Intel's first completely Pb-free microprocessor products.
