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Neal R. Mielke
Intel Fellow, Technology and Manufacturing Group
Director, Reliability Methods
INTEL CORPORATION
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 | 6,518,618, Integrated memory cell and method of fabrication, 2/11/2003 |
| 6,376,899, Planar guard ring, 4/23/2002 |
| 6,137,155, Planar guard ring, 10/24/2000 |
| 5,977,639, Metal staples to prevent interlayer delamination, 11/2/1999 |
| 5,566,194, Method and apparatus to improve read reliability in semiconductor memories, 10/15/1996 |
| 5,455,800, Apparatus and a method for improving the program and erase performance of a flash EEPROM memory array, 10/3/1995 |
| 5,452,311, Method and apparatus to improve read reliability in semiconductor memories, 9/19/1995 |
| 5,386,388, Single cell reference scheme for flash memory sensing and program state verification, 1/31/1995 |
| 5,377,147, Method and circuitry for preconditioning shorted rows in a nonvolatile semiconductor memory incorporating row redundancy, 12/27/1994 |
| 5,347,489, Method and circuitry for preconditioning shorted rows in a nonvolatile semiconductor memory incorporating row redundancy, 9/13/1994 |
| 5,339,272, Precision voltage reference, 8/16/1994 |
| 5,327,383, Method and circuitry for erasing a nonvolatile semiconductor memory incorporating row redundancy, 7/5/1994 |
| 5,309,012, Protected erase voltage discharge transistor in a nonvolatile semiconductor memory, 5/3/1994 |
| 5,301,150, Flash erasable single poly EPROM device, 4/5/1994 |
| 5,245,570, Floating gate non-volatile memory blocks and select transistors, 9/14/1993 |
| 5,239,505, Floating gate non-volatile memory with blocks and memory refresh, 8/24/1993 |
| 5,237,535, Method of repairing overerased cells in a flash memory, 8/17/1993 |
| 5,220,528, Compensation circuit for leakage in flash EPROM, 6/15/1993 |
| 4,963,825, Method of screening EPROM-related devices for endurance failure, 10/16/1990 |
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| Mielke, N.; Belgal, H.; Kalastirsky, I.; Kalavade, P.; Kurtz, A.; Qingru Meng; Righos, N.; Jie Wu; Flash EEPROM threshold instabilities due to charge trapping during program/erase cycling, Device and Materials Reliability, IEEE Transactions on Volume 4, Issue 3, Sept. 2004 Page(s):335 - 344 |
| Verma, G.; Mielke, N.; Reliability performance of ETOX based flash memories, Reliability Physics Symposium 1988. 26th Annual Proceedings., International 12-14 April 1988 Page(s):158 - 166 |
| Ong, T.C.; Fazio, A.; Mielke, N.; Pan, S.; Righos, N.; Atwood, G.; Lai, S.; Erratic Erase In ETOX/sup TM/ Flash Memory Array, VLSI Technology, 1993. Digest of Technical Papers. 1993 Symposium on May 17-19, 1993 Page(s):83 - 84 |
| Lee, Y.-H.; Wu, K.; Mielke, N.; Ma, L.J.; Hui, S.; Via delamination-a novel electromigration failure mechanism, Reliability Physics Symposium, 1997. 35th Annual Proceedings., IEEE International 8-10 April 1997 Page(s):206 - 210 |
| Wallace, B.; Lee, Y.-H.; Pantuso, D.; Wu, K.; Mielke, N.; Thermo-mechanical stress induced voiding in a tungsten-AlCu interconnect system, Reliability Physics Symposium Proceedings, 1999. 37th Annual. 1999 IEEE International 23-25 March 1999 Page(s):303 - 309 |
| Lee, Y.-H.; Nachman, R.; Seshan, K.; Kau, D.-C.; Mielke, N.; Role of hydrogen anneal in thin gate oxide for multi-metal-layer CMOS process, Reliability Physics Symposium, 2000. Proceedings. 38th Annual 2000 IEEE International 10-13 April 2000 Page(s):186 - 190 |
| Lee, Y.-H.; Wu, K.; Linton, T.; Mielke, N.; Hu, S.; Wallace, B.; Channel-width dependent hot-carrier degradation of thin-gate pMOSFETs, Reliability Physics Symposium, 2000. Proceedings. 38th Annual 2000 IEEE International 10-13 April 2000 Page(s):77 - 82 |
| Belgal, H.P.; Righos, N.; Kalastirsky, I.; Peterson, J.J.; Shiner, R.; Mielke, N.; A new reliability model for post-cycling charge retention of flash memories, Reliability Physics Symposium Proceedings, 2002. 40th Annual 7-11 April 2002 Page(s):7 - 20 |
| Yung-Huei Lee; Mielke, N.; Sabi, B.; Stadler, S.; Nachman, R.; Hu, S.; Effect of pMOST bias-temperature instability on circuit reliability performance, Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International 8-10 Dec. 2003 Page(s):14.6.1 - 14.6.4 |
| Rangan, S.; Mielke, N.; Yeh, E.C.C.; Universal recovery behavior of negative bias temperature instability [PMOSFETs] Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International 8-10 Dec. 2003 Page(s):14.3.1 - 14.3.4 |
| Mielke, N.; New EPROM Data-Loss Mechanisms, Reliability Physics Symposium Proceedings, 1983 21st Annual, 5-7 April 1983 Page(s) 106-113 |
| Shiner, R.; Mielke, N.; Haq, R., Characterization and Screening of SiO2 Defects in EEPROM Structures, Reliability Physics Symposium Proceedings, 1983 21st Annual, 5-7 April 1983 Page(s) 248-256 |
| Mielke, N.; Fazio, A.; Liou, H.; Reliability Charcterization of FLOTOX and Textured-Polysilicon E2PROMs, Reliability Physics Symposium Proceedings, 1987 25th Annual, 7-9 April 1987 Page(s) 85-92 |
| Mielke, N.; Non-Volatile Memory Reliability: 2002 Publications, Reliability Physics Symposium Year in Review Proceedings, 2003 1st Annual, 4 April 2003, Page(s) 45-68 |
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