List of Selected Technical Papers

Semiconductor Technology

F.H. Shair, A.S. Grove, E.E. Petersen and A. Acrivos, "The Effect of Confining Walls on the Stability of the Steady Wake behind a Circular Cylinder", J. of Fl. Mech. 17, 546 (1963)

A.S. Grove, E.E. Petersen and Andreas Acrivos, "Velocity Distribution in the Laminar Wake of a Parallel Flat Plate", Phys. of Fl. 7, No. 7 (1964)

A.S. Grove, F.H. Shair, E.E. Petersen and Andreas Acrivos, "An Experimental Investigation of the Steady Separated Flow Past a Circular Cylinder", J. of Fl. Mech. 19, 60 (1964)

Andreas Acrivos, D.D. Snowden, A.S. Grove and E.E. Petersen, "The Steady Separated Flow Past a Circular Cylinder at Large Reynolds Numbers", J. of Fl. Mech. 21, 737 (1965)

B.E. Deal, A.S. Grove, E.H. Snow and C.T. Sah, "Observation of Impurity Redistribution During Thermal Oxidation of Silicon Using the MOS Structure", J. Electrochem. Soc. 112, 3 (1965)

O. Leistiko, Jr. and A.S. Grove, "Breakdown Voltage of Planar Silicon Junctions", Sol.-St. Elec. 9, 847 (1966)

Andrew S. Grove, "Mass Transfer in Semiconductor Technology", I & EC 48, July 1966

B.E. Deal, M. Sklar, A.S. Grove and E.H. Snow, "Characteristics of the Surface-State Charge (Qss) of Thermally Oxidized Silicon", J. Electrochem. Soc. 114, 3, 266 (1967)

A.S. Grove, O. Leistiko, Jr. and W.W. Hooper, "Effect of Surface Fields on the Breakdown Voltage of Planar Silicon p-n Junctions", IEEE Trans. Elec. Dev. ED-14, 3, 157 (1967)

E.H. Snow, A.S. Grove, D.J. Fitzgerald, "Effects of Ionizing Radiation on Oxidized Silicon Surfaces and Planar Devices", Proc. of IEEE, 55, 7, 1168 (1967)

D.J. Fitzgerald and A.S. Grove, "Surface Recombination in Semiconductors", Surface Science 9, 2, 347 (1968)

*R.N. Noyce, R.E. Bohn and H.T. Chua, "Schottky Diodes Make IC Scene", Electronics, July 1969

Andrew S. Grove and S.T. Hsu, "Don't Just Fight Semiconductor Noise", Elec. Des. 17, 228 (1969)

L.L. Vadasz, A.S. Grove, T.A. Rowe and G.E. Moore, "Silicon-Gate Technology", IEEE Spectrum, October 1969

Andrew S. Grove, "Advances in LSI Technology", Colloque International sur la Microelectronique Avancee (International Conference on Advance Microelectronics), (1970). Also reprinted in Topics in Solid State and Quantum Electronics, 404-419, John Wiley (1972)

Semiconductor Devices

A.S. Grove, C.T. Sah, "Simple Analytical Approximations to the Switching Times in Narrow Base Diodes", Sol. St. Elec. 7, 107 (1964)

A.S. Grove, E.H. Snow, B.E. Deal and C.T. Sah, "Simple Physical Model for the Space-Charge Capacitance of Metal-Oxide-Semiconductor Structures", J. Appl Phys. 35, 8, 2458 (1964)

A.S. Grove, B.E. Deal, E.H. Snow and C.T. Sah, "Investigation of Thermally Oxidised Silicon Surfaces using Metal-Oxide-Semiconductor Structures", Sol. St. Elec. 8, 145 (1965)

A.S. Grove, P. Lamond, et al, "Stable MOS Transistors", Electro-Technology, Dec. 1965

A.S. Grove and E.H. Snow, "A Model for Radiation Damage in Metal-Oxide-Semiconductor Structures", Proc. Of IEEE 54, 6, 894 (1966)

L. Vadasz and A.S. Grove, "Temperature Dependence of MOS Transistor Characteristics Below Saturation", IEEE Trans. Elec. Dev. ED-13, 12, 863 (1966)

S.T. Hsu, D.J. Fitzgerald and A.S. Grove, "Surface-State Related 1/f noise in p-n Junctions and MOS Transistors", Appl. Phys. Ltrs. 12, 9, 287 (1968)

Andrew S. Grove, "Integrated Circuits", McGraw-Hill Encyclopedia of Science and Technology (1969)

D. Frohman-Bentchkowsky and A.S. Grove, "Conductance of MOS Transistors in Saturation", IEEE Trans. On Elec. Dev. ED-16, 1, 108 (1969)

L.L. Vadasz, H.T. Chua and A.S. Grove, "Semiconductor Random-Access Memories", IEEE Spectrum, May 1971

L.L. Vadasz, H.T. Chua and A.S. Grove, "Semiconductor Memories", The Electronic Engineer, May 1971

Semiconductor Fabrication

A.S. Grove, O. Leistiko, Jr., and C.T. Sah, "Diffusion of Gallium through a Silicon Dioxide Layer", J. Phys. Chem. Solids 25, 985 (1964)

A.S. Grove, O. Leistiko, Jr., and C.T. Sah, "Redistribution of Acceptor and Donor Impurities during Thermal Oxidation of Silicon", J. Appl. Phys. 35, 9, 2695 (1964)

A.S. Grove, A. Roder and C.T. Sah, "Impurity Distribution in Epitaxial Growth", J. Appl. Phys. 36, 3, 802 (1965)

B.E. Deal, A.S. Grove, E.H. Snow and C.T. Sah, "Observation of Impurity Redistribution During Thermal Oxidation of Silicon Using the MOS Structure", J. Electrochem. Soc.112, 3 (1965)

E.H. Snow, A.S. Grove, B.E. Deal and C.T. Sah, "Ion Transport Phenomena in Insulating Films", J. Appl. Phys. 36, 5, 1664 (1965)

O. Leistiko, Jr., A.S. Grove, and C.T. Sah, "Electron and Hole Mobilities in Inversion Layers on Thermally Oxidized Silicon Surfaces", IEEE Trans. On Elec. Dev. ED-12, 5, 248 (1965)

A.S. Grove and D.J. Fitzgerald, "The Origin of Channel Currents Associated with P+ Regions in Silicon", IEEE Trans. Elec. Dev. ED-12, 12, 619 (1965)

D.J. Fitzgerald and A.S. Grove, "Mechanisms of Channel Current Formation in Silicon P-N Junctions", Fourth Phys. of Fail. Symp. (1965)

B.E. Deal and A.S. Grove, "General Relationship for the Thermal Oxidation of Silicon", J. Appl. Phys. 36, 12, 3770 (1965)

A.S. Grove and D.J. Fitzgerald, "Surface Effects on p-n Junctions: Characteristics of Surface Space-Charge Regions under Non-Equilibrium Conditions", Sol.-St. Elec. 9, 783 (1966)

D.J. Fitzgerald and A.S. Grove, "Radiation-Induced Increase in Surface Recombination Velocity of Thermally Oxidized Silicon Structures", Proc. Of IEEE 54, 11, 1601 (1966)

B.E. Deal, E.H. Snow and A.S. Grove, "Properties of the Silicon Dioxide-Silicon System", SCP & Sol. St. Tech., 9, 11, 25 (1966)