 |
Yan Borodovsky
Intel Senior Fellow, Technology and Manufacturing Group
Director, Advanced Lithography
INTEL CORPORATION
|
|
|
|
|
 |
|
 | 6,069,739, Method and lens arrangement to improve imaging performance of microlithography exposure tool, 5/30/2000 |
| 6,021,009, Method and apparatus to improve across field dimensional control in a microlithography tool, 2/1/2000 |
| 5,946,079, Photolithography method using coherence distance control, 8/31/1999 |
| 5,840,448, Phase shifting mask having a phase shift that minimizes critical dimension sensitivity to manufacturing and process variance, 11/24/1998 |
| 5,801,821, Photolithography method using coherence distance control, 9/1/1998 |
| 5,532,090, Method and apparatus for enhanced contact and via lithography, 7/2/1996 |
| 5,498,579, Method of producing semiconductor device layer layout, 3/12/1996 |
| 5,424,154, Lithographic enhancement method and apparatus for randomly spaced structures, 6/13/1995 |
| 4,767,215, Lens characterization apparatus and method, 8/30/1988 |
| 4,672,420, Integrated circuit structure having conductive, protective layer for multilayer metallization to permit reworking, 6/9/1987 |
| 4,580,332, Forming a conductive, protective layer for multilayer metallization, 4/8/1986 |
| 4,529,685, Method for making integrated circuit devices using a layer of indium arsenide as an antireflective coating, 7/16/1985 |
|
| < Back to Biography |
|
