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Intel Fellow
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Al Fazio

Intel Fellow, Technology and Manufacturing Group
Director, Memory Technology Development
INTEL CORPORATION
Patents
5,065,364, Apparatus for Providing Block Erasing in a Flash EPROM, 11/12/1991
5,239,505, Floating Gate Non-Volatile Memory with Blocks and Memory Refresh, 8/24/1993
5,245,570, Floating Gate Non-Volatile Memory with Blocks and Select Transistors, 9/14/1993
5,402,370, Circuitry and Method for Selecting a Drain Programming Voltage for a Nonvolatile Memory, 3/28/1995
5,440,505, Method and Circuitry for Storing Discrete Amounts of Charge in a Single Memory Element, 8/8/1995
5,442,586, Method and Apparatus for Controlling the Output Current Provided by a Charge Pump Circuit, 8/15/1995
5,455,794, Method and Apparatus for Controlling the Output Current Provided By a Charge Pump Circuit, 10/3/1995
5,475,693, Error Management Processes for Flash EEPROM Memory Arrays, 12/12/1995
5,497,119, High Precision Voltage Regulation Circuit for Programming Multilevel Flash Memory, 3/5/1996
5,508,958, Method and Apparatus for Sensing the State of Floating Gate Memory Cells by Applying a Variable Gate Voltage, 8/16/1996
5,523,972, Method and Apparatus for Verifying the Programming of Multi-Level Flash EPROM Memory, 6/4/1996
5,546,042, High Precision Voltage Regulation Circuit for Programming Multilevel Flash Memory, 8/13/1996
5,566,125, Method and Circuitry for Storing Discrete Amounts of Charge in a Single Memory Element, 10/15/1996
5,677,869, Programming Flash Memories Using Strict Ordering of States, 10/14/1997
5,701,266, Programming Flash Memories Using Distributed Learning Methods, 12/23/1997
5,729,489, Programming Flash Memory Using Predictive Learning Methods, 3/17/1998
5,737,265, Programming Flash Memory Using Data Stream Analysis, 4/7/1998
5,742,543, Flash Memory Device Having a Page Mode of Operation, 4/21/1998
5,748,546, Sensing Scheme for Flash Memory with Multilevel Cell, 5/5/1998
5,801,991, Deselected Wordline that Float During MLC Programming of a Flash Memory, 9/1/1998
5,828,616, Sensing Scheme for Flash Memory with Multilevel Cell, 10/27/1998
5,892,710, Method and Circuitry for Storing Discrete Amounts of Charge in a Single Memory Element, 4/6/1999
6,091,618, Method and Circuitry for Storing Discrete Amounts of Charge in a Single Memory Element, 7/11/2000
6,518,618, Integrated Memory Cell and Method of Fabrication, 2/11/2003
Publications/Speakerships
Mielke, N., Fazio, A.; "Reliability Comparison of FLOTOX and Textured Polysilicon E2PROMs", IEEE International Reliability Physics Symposium, 1987
Woo, B.J., Ong, T.C., Fazio, A., Park, C., Atwood, G., Holler, M., Tam, S.; Lai; "A Novel Memory Cell Using Flash Array Contactless EPROM (FACE) technology", Electron Devices Meeting, Technical Digest, International, pp. 91-94,1990
Ong, T.C., Fazio, A., Mielke, N., Pan, S., Righos, N., Atwood, G., Lai, S.; "Erratic Erase in ETOXTM Flash Memory Array", VLSI Technology, Digest of Technical Papers, Symposium on , pp. 83 - 84, 1993
Bauer, M., Alexis, R.; Atwood, G.; Baltar, B.; Fazio, A.; Frary, K.; Hensel, M.; Ishac, M.; Javanifard, J.; Landgraf, M.; Leak, D.; Loe, K.; Mills, D.; Ruby, P.; Rozman, R.; Sweha, S.; Talreja, S.; Wojciechowski, K.; "A Multilevel-Cell 32Mb Flash Memory," Technical Digest IEEE International Solid State Circuits Conference, 1995, pp. 132,133.
Atwood, G.; Fazio, A.; Mills, D.; Reaves, B.; "Intel StrataFlash® Memory Technology Overview", Intel technology Journal, Q4 1997
Fazio, A.; Bauer, M.; "Intel StrataFlash® Memory Technology Development and Implementation", Intel technology Journal, Q4 1997
Fazio, A., "A High Density High Performance 180 nm Generation EtoxTM Flash Memory Technology", Electron Devices Meeting, Technical Digest. International, pp. 267 - 270, 1999
Bauer, M.; Alexis, R.; Atwood, G.; Baltar, B.; Fazio, A.; Frary, K.; Hensel, M.; Ishac, M.; Javanifard, J.; Landgraf, M.; Leak, D.; Loe, K.; Mills, D.; Ruby, P.; Rozman, R.; Sweha, S.; Talreja, S.; Wojciechowski, K.; "A Multilevel-Cell 32 Mb Flash Memory", Multiple-Valued Logic, 2000. (ISMVL 2000) Proceedings. 30th IEEE International Symposium on, pp.367-368, 2000
Member of a Panel at the IEEE International Solid State Circuits Conference - "How Will Future Portable Systems Store and Access Data" - February 2001.
Fazio, A.; Keeney, S.; Lai, S. "ETOXTM Flash Memory Technology: Scaling and Integration Challenges" Intel Technology Journal, Volume 6, Issue 2, May 2002.
Franca-Neto, L.M.; Pardy, P.; Ly, M.P.; Rangel, R.; Suthar, S.; Syed, T.; Bloechel, B.; Lee, S.; Burnett, C.; Cho, D.; Kau, D.; Fazio, A.; Soumyanath, K.; "Enabling High-Performance Mixed-Signal System-on-a-Chip (SoC) in High Performance Logic CMOS Technology", VLSI Circuits Digest of Technical Papers, Symposium on, pp. 164-167, 2002
Member of a Panel at the IEEE International Electron Devices Meeting - "Embedded Memories for SoC - What Makes Sense?" - December 2002.
Fazio, A; "0.13um Logic+Flash: Technology and Applications", IEEE Non-Volatile Semiconductor Memory Workshop (NVSMW), 2003
Electron Device Society, Santa Clara Chapter, Symposium on Memories; "130nm Flash+Logic Technology", 2003
Member of a Panel at the Symposium on VLSI Circuits - "What is the Vision of Unified Custom Memory? Main or Niche" - June 2003.
Fazio, A; "A 130nm Flash+Logic+Analog Modular Technology", International Symposium on VLSI Technology, Systems, and Applications, pp. 60-63, 2003
UC Berkeley Solid State Seminar; "Flash Memory Technology: Integration, Multi-Level-Cell and Scaling", 2003
Fazio, A; "Flash Memory Scaling", Material Research Society Bulletin, Vol. 29, No. 11, November 2004
Member of a Panel at the Semiconductor Research Corporation (SRC) Forum on NVM Memories - November 2004.
Fazio, A.; "Future Direction of Non-Volatile Memory Technologies", Material Research Society Fall Meeting, Symposium D.1, December 2004
Professional Affiliations
Financial Chairman, IEEE Non-Volatile Semiconductor Memory Workshop, 1995
Technical Chairman, IEEE Non-Volatile Semiconductor Memory Workshop, 1997
General Chairman, IEEE Non-Volatile Semiconductor Memory Workshop, 1998
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