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This course is an introductory survey for chemical and
electrical engineers of chemical processing principles applied to
microelectronic device fabrication. Key concepts originate from chemical
kinetics; thermodynamics; mass and energy balances; transport of mass,
momentum, and heat; and process synthesis and integration. The course assumes a
minimal prior training in chemistry, and is may serve as an ECE technical
elective.
Course Overview
Presentation on how class has been developed and shared
experience on teaching the course.
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Complete Syllabus -
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Format: 1 Lecture per Class Session, Original course taught twice weekly. Exam's
replace lectures during scheduled class sessions.
Required Text: The Science and Engineering of Microelectronic Fabrication, S.
A. Campbell, Oxford, 2nd ed., 2001.
ChBE 393/469A Course Structure:
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Lect. No.
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Topics
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Underlying Concepts
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Reading in Campbell
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1
2
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Industry history
SIA Roadmap
Semiconductor materials
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Overall perspective
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Ch.1, FEOL video
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3
4
5
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Semiconductor physics
pn junctions
Field effects
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Solid state physics
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Notes
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6
7
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Lithography
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Optics
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Ch. 7.1, 7.3-7.6, 8.1-8.6
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8
9
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Etching (wet)
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Buffers
Electrochemistry
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Ch. 11.1
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10
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Etching (dry)
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Plasma phenomena
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Ch. 11.3-11.7
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11
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Etching (dry)
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Plasma phenomena
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Ch. 11.3-11.7
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12
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Physical vapor Deposition
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Sputtering physics
Process control
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Ch. 12.1-12.7, 12.10-12.11, 12.13
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13a
13b
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Rapid thermal processing
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Rate selectivity
Process control
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Notes, Ch. 6.2-6.3
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Hour Exam 1
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Microelect. Lab Tour
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14
15
16
17
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Chemical vapor
Deposition
(Note Lecture 17 on hold at time of posting)
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Surface kinetics
Kinetics/gas transport
Boundary layers
Case study: TiSi 2
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Ch. 13.1-13.4
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18
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Si oxidation
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Rate-limiting steps
Diffusion-rxn (differential
mass balances, 1-D)
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Ch. 4.1-4.4, 4.6
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19
20
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Si refining
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Well-stirred reactors
Differential mass balances on distributions
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Notes
469B abstract due
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21
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Czochralski growth
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Separations by crystallization Differential energy balances (1-D)
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Ch. 2.4-2.8
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Hour Exam 2
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22
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Diffusional doping
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Defect thermodynamics
Transient diffusion equations
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Ch. 3.1-3.5
BEOL video
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23
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Diffusional doping
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Defect thermodynamics
Transient diffusion equations
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Ch. 3.1-3.5
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24
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Ion implantation
Transient enhanced diffusion
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Implantation physics
Diffusion-rxn (3-D PDE's)
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Ch. 5.1, 5.6
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25
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Packaging
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Electrochemistry
1-D heat transfer
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Notes
469B term paper due
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26
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Factory-level issues |
Process integration |
Notes |
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Final Exam
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Complete
Lecture Download
Complete
Exam Download
Complete
Homework Download
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