Laboratory Course - Microelectronics Fabrication Curriculum

This course is an introductory survey for chemical and electrical engineers of chemical processing principles applied to microelectronic device fabrication. Key concepts originate from chemical kinetics; thermodynamics; mass and energy balances; transport of mass, momentum, and heat; and process synthesis and integration. The course assumes a minimal prior training in chemistry, and is may serve as an ECE technical elective.

Course Overview

Presentation on how class has been developed and shared experience on teaching the course. Read more.

Complete Syllabus

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Format: 1 Lecture per Class Session, Original course taught twice weekly. Exam's replace lectures during scheduled class sessions.
Required Text: The Science and Engineering of Microelectronic Fabrication, S. A. Campbell, Oxford, 2nd ed., 2001.

ChBE 393/469A Course Structure:

Lect. No.

Topics

Underlying Concepts

Reading in Campbell

1
2

Industry history
SIA Roadmap
Semiconductor materials

Overall perspective

Ch.1, FEOL video

3
4
5

Semiconductor physics
pn junctions
Field effects

Solid state physics

Notes

6
7

Lithography

Optics

Ch. 7.1, 7.3-7.6, 8.1-8.6

8

9

Etching (wet)

Buffers
Electrochemistry

Ch. 11.1

10

Etching (dry)

Plasma phenomena

Ch. 11.3-11.7

11

Etching (dry)

Plasma phenomena

Ch. 11.3-11.7

12

Physical vapor Deposition

Sputtering physics
Process control

Ch. 12.1-12.7, 12.10-12.11, 12.13

13a
13b

Rapid thermal processing

Rate selectivity
Process control

Notes, Ch. 6.2-6.3

 

Hour Exam 1

    
 

 Microelect. Lab Tour

    

14
15
16
17

Chemical vapor
Deposition
(Note Lecture 17 on hold at time of posting)

Surface kinetics
Kinetics/gas transport
Boundary layers
Case study: TiSi 2

Ch. 13.1-13.4

18

Si oxidation

Rate-limiting steps
Diffusion-rxn (differential
mass balances, 1-D)

Ch. 4.1-4.4, 4.6

19
20

Si refining

Well-stirred reactors
Differential mass balances on distributions

Notes
469B abstract due

21

Czochralski growth

Separations by crystallization Differential energy balances (1-D)

Ch. 2.4-2.8

 

Hour Exam 2

   

22

Diffusional doping

Defect thermodynamics
Transient diffusion equations

Ch. 3.1-3.5
BEOL video

23

Diffusional doping

Defect thermodynamics
Transient diffusion equations

Ch. 3.1-3.5

24

Ion implantation
Transient enhanced diffusion

Implantation physics
Diffusion-rxn (3-D PDE's)

Ch. 5.1, 5.6

25

Packaging

Electrochemistry
1-D heat transfer

Notes
469B term paper due

26

 Factory-level issues Process integration Notes
 

Final Exam

   

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Complete Exam Download
Complete Homework Download