Introducing 3-D transistors manufactured at 22nm for future microprocessor families, continuing pursuit of Moore's Law.
Presentation: Innovations in 22-nm transistor technology include tri-gate transistors, which improve performance and energy efficiency.
Video: BLOODHOUND SSC manages calculations behind car propulsion systems with three Intel® Atom™ chips.
Video: Intel® Atom™ Processor HD.
Paper covers optimization for a 32nm SoC platform with 2nd Generation high-k/Metal gate transistors.
Presentation: low power optimization for a 32nm SoC platform with 2nd generation high-k/Metal gate transistors.
Presentation examines the impacts and benefits of RF CMOS technology scaling in high-k/Metal gate era for RF SoC (System-on-Chip) applications.
Presentation covers SiO2 scaling, high-k/metal-gate problems, breakthroughs, and performance reports for NMOS and PMOS transistors.
Gate Dielectric Scaling for High-Performance CMOS: SiO2 to High-K, an option for the 45nm high-performance logic technology node.
Paper: composite high-K gate in the QWFET silicon substrate integration for thin electrical oxide, low gate leakage, and carrier confinement.