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Realistic Graphics with Built-in Visuals [86 K]
Get realistic graphics with Intel® visual technology, integrated in 3rd generation Intel® Core™ processors.

Get realistic graphics with Intel® visual technology, integrated in 3rd generation Intel® Core™ processors.

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Intel® Extended Memory 64 Technology: 64-Bit Desktop Computing
Discusses 64-bit desktop computing benefits from more physical and virtual applications.

Discusses 64-bit desktop computing benefits from more physical and virtual applications.

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Intel® QuickPath Architecture
White Paper: Intel® QuickPath Architecture unleashes the performance of future generations of Intel® multi-core microprocessors.

White Paper: Intel® QuickPath Architecture unleashes the performance of future generations of Intel® multi-core microprocessors.

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An Introduction to the Intel® QuickPath Interconnect
White Paper: the Intel® QuickPath Interconnect links stitch together processors in distributed shared memory platform architecture.

White Paper: the Intel® QuickPath Interconnect links stitch together processors in distributed shared memory platform architecture.

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Intel® Atom™-Based Tablets at CES 2011 [77 K]
Video: Product Manager Netbooks and Tablets Group Larry Chao overviews the tablets on display in the Intel booth at CES 2011.

Video: Product Manager Netbooks and Tablets Group Larry Chao overviews the tablets on display in the Intel booth at CES 2011.

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Intel presents Cedar Trail next-gen Atom platform at IDF 2011 [77 K]
Video: Intel presents Cedar Trail next-gen Atom™ platform at IDF 2011.

Video: Intel presents Cedar Trail next-gen Atom™ platform at IDF 2011.

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Video: David Tuhy at NAB 2010 [79 K]
Video: General Manager, Intel Storage Group David Tuhy reports from the Intel booth at the National Association of Broadcasters 2010 conference.

Video: General Manager, Intel Storage Group David Tuhy reports from the Intel booth at the National Association of Broadcasters 2010 conference.

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32nm Logic Technology with 2nd Gen High-k + Metal Gate Transistors
Presentation of 32nm logic technology for high performance microprocessors featuring 2nd generation high-k + metal gate transistors.

Presentation of 32nm logic technology for high performance microprocessors featuring 2nd generation high-k + metal gate transistors.

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Introduction to Intel® 32-nm Process Technology
White paper provides manufacturing history on the 32-nm and 45-nm process technology and Hi-k + metal gate transistors.

White paper provides manufacturing history on the 32-nm and 45-nm process technology and Hi-k + metal gate transistors.

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Optimize 32nm SoC Platform Technology, 2nd Generation High-k/Met
Paper covers optimization for a 32nm SoC platform with 2nd Generation high-k/Metal gate transistors.

Paper covers optimization for a 32nm SoC platform with 2nd Generation high-k/Metal gate transistors.

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Gate Dielectric Scaling for High-Performance CMOS: SiO2 to High-K
Gate Dielectric Scaling for High-Performance CMOS: SiO2 to High-K, an option for the 45nm high-performance logic technology node.

Gate Dielectric Scaling for High-Performance CMOS: SiO2 to High-K, an option for the 45nm high-performance logic technology node.

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Strained Germanium QWFE Transistor as P-Channel Device Option for Low Power III-V CMOS Architecture
Demonstrates a Germanium p-channel QWFET with thin scaled TOXE and high mobility, delivering four times higher hole mobility.

Demonstrates a Germanium p-channel QWFET with thin scaled TOXE and high mobility, delivering four times higher hole mobility.

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Advanced Metal Gate/High-K Dielectric Stacks for CMOS Transistors
Paper: n-type and p-type metal electrodes on high-K gate dielectrics enable same oxide thickness, desirable transistor threshold, and more.

Paper: n-type and p-type metal electrodes on high-K gate dielectrics enable same oxide thickness, desirable transistor threshold, and more.

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Advanced High-K Gate Dielectric for Short-Channel in QWFE Transistors on Silicon Substrate
Paper: composite high-K gate in the QWFET silicon substrate integration for thin electrical oxide, low gate leakage, and carrier confinement.

Paper: composite high-K gate in the QWFET silicon substrate integration for thin electrical oxide, low gate leakage, and carrier confinement.

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Role of High-K Gate Dielectrics
Presentation Discusses Role of High-K Gate Dielectrics and Metal Gate Electrodes in Emerging Nanoelectronic Devices.

Presentation Discusses Role of High-K Gate Dielectrics and Metal Gate Electrodes in Emerging Nanoelectronic Devices.

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High-κ Gate Dielectrics, Metal Gate Electrodes in Silicon and Non-Silicon Logic Nanotechnology
Discusses low gate-leakage silicon and non-silicon transistor nanotechnology using high-κ gate dielectrics and metal gate electrodes.

Discusses low gate-leakage silicon and non-silicon transistor nanotechnology using high-κ gate dielectrics and metal gate electrodes.

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High Performance 32nm Logic Technology
Record NMOS and PMOS drive currents are reported, along with the tightest contacted gate pitch for a 32nm or 28nm technology.

Record NMOS and PMOS drive currents are reported, along with the tightest contacted gate pitch for a 32nm or 28nm technology.

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Intel® 32nm Delivers System on Chip [61 K]
Intel's innovative 32nm logic technology is a revolutionary technical breakthrough, delivering record NMOS and PMOS transistor performance.

Intel's innovative 32nm logic technology is a revolutionary technical breakthrough, delivering record NMOS and PMOS transistor performance.

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Intel’s Tick Tock Model [61 K]
Intel's Tick-Tock model maintains an innovation cadence in microprocessor manufacturing and microarchitecture with new advancements every other year.

Intel's Tick-Tock model maintains an innovation cadence in microprocessor manufacturing and microarchitecture with new advancements every other year.

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Moore's Law and Intel® Innovation [68 K]
Intel's Moore's Law inspires the creation of groundbreaking new technologies and energy efficiency.

Intel's Moore's Law inspires the creation of groundbreaking new technologies and energy efficiency.

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Moore’s Law Inspires Intel Innovation [61 K]
Bold forecast inspires the creation of groundbreaking new technologies and more power-efficient processors. (For embedded developers.)

Bold forecast inspires the creation of groundbreaking new technologies and more power-efficient processors. (For embedded developers.)

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Moore's Law and Intel Innovations [59 K]
Intel's Moore's Law: Intel co-founder predicted the number of transistors on a chip would double every two years. (For mobile.)

Intel's Moore's Law: Intel co-founder predicted the number of transistors on a chip would double every two years. (For mobile.)

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Moore’s Law Inspires Intel Innovation [66 K]
Bold forecast inspires the creation of groundbreaking new technologies and more power-efficient processors. (For embedded developers.)

Bold forecast inspires the creation of groundbreaking new technologies and more power-efficient processors. (For embedded developers.)

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Non-Planar, Multi-Gate InGaAs QWFETs with High-K Gate Dielectric and Ultra Scaled Gate-to-Drain/Gate-to-Source Separation
Paper: non-planar, multi-gate InGaAs QWFETs with high-K gate dielectric and ultra-scaled gate-to-drain and gate-to-source separations of 5nm.

Paper: non-planar, multi-gate InGaAs QWFETs with high-K gate dielectric and ultra-scaled gate-to-drain and gate-to-source separations of 5nm.

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Intel Announces New 22nm 3D Tri-gate Transistors
Presentation: Intel introduces a fundamentally different technology for future microprocessor families, 3D transistors manufactured at 22nm.

Presentation: Intel introduces a fundamentally different technology for future microprocessor families, 3D transistors manufactured at 22nm.

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