We are sorry, This PDF is available in download format only

High-κ Gate Dielectrics, Metal Gate Electrodes in Silicon and Non-Silicon Logic Nanotechnology

Introduction

Since the advent of the metal-oxide semiconductor (MOS) system over 40 years ago, the SiO2 gate oxide has been serving as the key enabling material in scaling silicon CMOS technology. However, continued SiO2 gate oxide scaling is becoming exceedingly difficult since (a) the gate oxide leakage is increasing with decreasing SiO2 thickness, and (b) SiO2 is running out of atoms for further scaling. As Moore’s law extends scaling and device performance into the 21st century, high-κ gate dielectrics and metal gate electrodes will be required for high-performance and low-power CMOS applications in the 45 nm node and beyond. In addition to facilitating standard Si CMOS transistors, the high-κ/metal gate combination is also important for enabling future high-performance and low gate leakage emerging nanoelectronic transistors built upon non-silicon high-mobility materials, e.g. Ge, carbon nanotubes, and III-V substrates. The enabling of high-performance and low gate-leakage silicon and non-silicon transistor nanotechnology research via use of high-κ gate dielectrics and metal gate electrodes is discussed in this paper.

Read the full High-κ Gate Dielectrics, Metal Gate Electrodes in Silicon and Non-Silicon Logic Nanotechnology Paper.

High-κ Gate Dielectrics, Metal Gate Electrodes in Silicon and Non-Silicon Logic Nanotechnology

Introduction

Since the advent of the metal-oxide semiconductor (MOS) system over 40 years ago, the SiO2 gate oxide has been serving as the key enabling material in scaling silicon CMOS technology. However, continued SiO2 gate oxide scaling is becoming exceedingly difficult since (a) the gate oxide leakage is increasing with decreasing SiO2 thickness, and (b) SiO2 is running out of atoms for further scaling. As Moore’s law extends scaling and device performance into the 21st century, high-κ gate dielectrics and metal gate electrodes will be required for high-performance and low-power CMOS applications in the 45 nm node and beyond. In addition to facilitating standard Si CMOS transistors, the high-κ/metal gate combination is also important for enabling future high-performance and low gate leakage emerging nanoelectronic transistors built upon non-silicon high-mobility materials, e.g. Ge, carbon nanotubes, and III-V substrates. The enabling of high-performance and low gate-leakage silicon and non-silicon transistor nanotechnology research via use of high-κ gate dielectrics and metal gate electrodes is discussed in this paper.

Read the full High-κ Gate Dielectrics, Metal Gate Electrodes in Silicon and Non-Silicon Logic Nanotechnology Paper.

Related Videos