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Introduction• 1.2nm physical SiO2 in production in our 90nm logic technology node• 0.8nm physical SiO2 in our research transistors with 15nm physical Lg• Gate leakage is increasing with reducing physical SiO2 thickness• SiO2 running out of atoms for further scaling• Will eventually need high-K
Intel® Atom™ platform presentation at IDF 2011
John Cormican, demonstrates Intel® Virtualization Technology at Embedded World 2010.
See how the new transistor process and tri-gate fin design enable greater computing experiences.
Video shows storage possibilities powered by Intel® Architecture
See how three Intel® Atom™ chips manage calculations behind propulsion system in BLOODHOUND SSC.