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What is McAfee ePO Deep Command*

What is McAfee ePO Deep Command*? Learn how McAfee ePO Deep Command helps IT enhance security and lower costs.

Personal Health and Health Information Technology

Advocating proactive healthcare models using technology for broadband infrastructure, interoperability, and care in the home.

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RF CMOS Technology Scaling in High-k/Metal Gate Era

RF CMOS technology benefits from general CMOS technology scaling and improves by innovative transistor and interconnect technologies.

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Gate Dielectric Scaling for High-Performance CMOS: SiO2 to High-K

Gate Dielectric Scaling for High-Performance CMOS: SiO2 to High-K, an option for the 45nm high-performance logic technology node.

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Strained Germanium QWFE Transistor as P-Channel Device Option for Low Power III-V CMOS Architecture

Demonstrates a Germanium p-channel QWFET with thin scaled TOXE and high mobility, delivering four times higher hole mobility.

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Role of High-K Gate Dielectrics

Presentation Discusses Role of High-K Gate Dielectrics and Metal Gate Electrodes in Emerging Nanoelectronic Devices.

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High-κ Gate Dielectrics, Metal Gate Electrodes in Silicon and Non-Silicon Logic Nanotechnology

Discusses low gate-leakage silicon and non-silicon transistor nanotechnology using high-κ gate dielectrics and metal gate electrodes.

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Non-Planar, Multi-Gate InGaAs QWFETs with High-K Gate Dielectric and Ultra Scaled Gate-to-Drain/Gate-to-Source Separation

Paper: non-planar, multi-gate InGaAs QWFETs with high-K gate dielectric and ultra-scaled gate-to-drain and gate-to-source separations of 5nm.

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Evaluation/Transport Physics: Schottky-Gate III-V Compound Semiconductor QWFE Transistors

Paper examines and evaluates logic performance of Schottky-gate QWFETs against that of advanced Strained Si MOSFETs in low power voltages.

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Intel Announces New 22nm 3D Tri-gate Transistors

Presentation: Intel introduces a fundamentally different technology for future microprocessor families, 3D transistors manufactured at 22nm.

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