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University of Plymouth with Intel® vPro™ Technology manages power by reducing consumption and carbon emissions for its green agenda.
RF CMOS technology benefits from general CMOS technology scaling and improves by innovative transistor and interconnect technologies.
RF CMOS technology is shown to benefit from the gen-eral CMOS technology scaling. The majority of RF device per-formance metrics have steadily improved by the introduction of innovative transistor and interconnect technologies.
Demonstrates a Germanium p-channel QWFET with thin scaled TOXE and high mobility, delivering four times higher hole mobility.
Paper demonstrates a Germanium p-channel QWFET with thin scaled TOXE and high mobility, delivering four times higher hole mobility reported for any Germanium device than new strained silicon.
Paper: n-type and p-type metal electrodes on high-K gate dielectrics enable same oxide thickness, desirable transistor threshold, and more.
Covers n-type and p-type metal electrodes on high-K gate dielectrics for CMOS applications, enabling metal equivalent oxide thickness with little gate oxide leakage, desirable transistor threshold, and transistor channel mobility similar to SiO2.
Paper: composite high-K gate in the QWFET silicon substrate integration for thin electrical oxide, low gate leakage, and carrier confinement.
Paper covers integration of an advanced composite high-K gate stack in the QWFET silicon substrate, enabling thin electrical oxide, low gate leakage, effective carrier confinement, and high carrier velocity in the QW channel.
Discusses low gate-leakage silicon and non-silicon transistor nanotechnology using high-κ gate dielectrics and metal gate electrodes.
Paper discusses high-performance and low gate-leakage silicon and non-silicon transistor nanotechnology research using high-κ gate dielectrics and metal gate electrodes.
Intel introduces new 22nm technology.
Intel introduces a fundamentally different technology for future microprocessor families: 3-D transistors manufactured at 22nm. These new transistors enable Intel to continue to relentlessly pursue Moore's Law.
Backgrounder: Intel's 22nm innovation ushers in new semiconductor technology and ensures the continuation of Moore's Law.
For the first time in history, silicon transistors are entering the third dimension. Intel is introducing the tri-gate transistor, in which the transistor channel is raised into the 3rd dimension.