Intel® technologies handle data center heat, boost efficiency with high ambient temperature designs for cooling and power utilization savings.
In part 1 of IT sustainability, Intel’s Mike Breton talks proof of concept work on lowering office energy consumption and at home.
Case Study: National Stock Exchange moves its trading platform to the Intel® Xeon® processor 5500 series and boosts speed by 25 percent.
NSE Moves Trading Platform to Intel
Video: Thomas Reuters gets Intel® Xeon® processor-based servers to cost-effectively meet Westlaw* database needs.
Thomson Reuters chooses new servers with multi-core Intel® Xeon® processors to cost-effectively meet growing demand for its Westlaw* database services.Full View >
RF CMOS technology benefits from general CMOS technology scaling and improves by innovative transistor and interconnect technologies.
RF CMOS technology is shown to benefit from the gen-eral CMOS technology scaling. The majority of RF device per-formance metrics have steadily improved by the introduction of innovative transistor and interconnect technologies.
Gate Dielectric Scaling for High-Performance CMOS: SiO2 to High-K, an option for the 45nm high-performance logic technology node.
Intel demonstrates high-performance PMOS and NMOS transistors with high-K/metal-gate gate stacks with the right threshold voltages for both p- and nchannels on bulk Si
Demonstrates a Germanium p-channel QWFET with thin scaled TOXE and high mobility, delivering four times higher hole mobility.
Paper demonstrates a Germanium p-channel QWFET with thin scaled TOXE and high mobility, delivering four times higher hole mobility reported for any Germanium device than new strained silicon.
Discusses low gate-leakage silicon and non-silicon transistor nanotechnology using high-κ gate dielectrics and metal gate electrodes.
Paper discusses high-performance and low gate-leakage silicon and non-silicon transistor nanotechnology research using high-κ gate dielectrics and metal gate electrodes.