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浪潮丁煜:x86 服务器已成关键应用“好声音”

浪潮和英特尔已经建立芯片级的战略合作关系,浪潮在服务器新品的预研发方面也大幅提前。有鉴于云计算、大数据等发展趋势迅猛,浪潮会继续加大基于英特尔至强 E7 为平台的多路高端 x86 服务器的研发,以满足不同行业用户对高端 x86 服务器的需求。

X86 架构——证券 IT 的激进与稳健之道

随着 x86 服务器在性能、稳定性、安全性的不断提升,以及 x86 本身所具有的成本优势,x86 将在证券行业有更大的应用空间。

关键业务应用与选择 X86 架构已是大势所趋

随着 X86 平台的不断演进与市场份额的不断扩大,传统的关键业务领域已经由原来的 RISC 架构一家独大变成了 RISC、X86 两分天下,并且在数据中心应用中,越来越多的用户倾向于使用价格更便宜、性能更出色、功耗更节约的 X86 平台。

RF CMOS Technology Scaling in High-k/Metal Gate Era

RF CMOS technology benefits from general CMOS technology scaling and improves by innovative transistor and interconnect technologies.

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Gate Dielectric Scaling for High-Performance CMOS: SiO2 to High-K

Gate Dielectric Scaling for High-Performance CMOS: SiO2 to High-K, an option for the 45nm high-performance logic technology node.

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Strained Germanium QWFE Transistor as P-Channel Device Option for Low Power III-V CMOS Architecture

Demonstrates a Germanium p-channel QWFET with thin scaled TOXE and high mobility, delivering four times higher hole mobility.

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Role of High-K Gate Dielectrics

Presentation Discusses Role of High-K Gate Dielectrics and Metal Gate Electrodes in Emerging Nanoelectronic Devices.

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High-κ Gate Dielectrics, Metal Gate Electrodes in Silicon and Non-Silicon Logic Nanotechnology

Discusses low gate-leakage silicon and non-silicon transistor nanotechnology using high-κ gate dielectrics and metal gate electrodes.

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Non-Planar, Multi-Gate InGaAs QWFETs with High-K Gate Dielectric and Ultra Scaled Gate-to-Drain/Gate-to-Source Separation

Paper: non-planar, multi-gate InGaAs QWFETs with high-K gate dielectric and ultra-scaled gate-to-drain and gate-to-source separations of 5nm.

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Evaluation/Transport Physics: Schottky-Gate III-V Compound Semiconductor QWFE Transistors

Paper examines and evaluates logic performance of Schottky-gate QWFETs against that of advanced Strained Si MOSFETs in low power voltages.

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