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Data Center Optimization

Discover why and how you should invest in data center optimization with guidance and tools created from Intel’s rich experience with the data center.

Virtualization Best Practices: Real World Experience Gives Insight

Brief highlights successful, real-world virtualization deployments with VMware and Intel, and sharing of best practices.

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Wake Forest Medical Center Video: Healthy Data Center

Wake Forest University Baptist Medical Center uses Intel® architecture to save USD 450,000 on hardware acquisition costs and increase IT agility.

Czech Technical University: Packing a More Powerful Punch

Czech Technical University boosts desktop performance with Intel® Xeon® processor E7 v2 family.

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Advanced High-K Gate Dielectric for Short-Channel in QWFE Transistors on Silicon Substrate

Paper: composite high-K gate in the QWFET silicon substrate integration for thin electrical oxide, low gate leakage, and carrier confinement.

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Advanced High-K Gate Dielectric for Short-Channel in QWFE Transistors on Silicon Substrate

Paper: composite high-K gate in the QWFET silicon substrate integration for thin electrical oxide, low gate leakage, and carrier confinement.

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Role of High-K Gate Dielectrics

Presentation Discusses Role of High-K Gate Dielectrics and Metal Gate Electrodes in Emerging Nanoelectronic Devices.

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High-κ Gate Dielectrics, Metal Gate Electrodes in Silicon and Non-Silicon Logic Nanotechnology

Discusses low gate-leakage silicon and non-silicon transistor nanotechnology using high-κ gate dielectrics and metal gate electrodes.

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High-k/Metal-Gate Stack and Its MOSFET Characteristics

Article, IEEE Election Device Letters, Vol 25, No. 6, June 2004: High-k/Metal-Gate Stack and Its MOSFET Characteristics.

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Evaluation/Transport Physics: Schottky-Gate III-V Compound Semiconductor QWFE Transistors

Paper examines and evaluates logic performance of Schottky-gate QWFETs against that of advanced Strained Si MOSFETs in low power voltages.

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