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Care Coordination in Healthcare

Patients need care teams to communicate, collaborate and plan—often across organizational boundaries.

What is McAfee ePO Deep Command*

What is McAfee ePO Deep Command*? Learn how McAfee ePO Deep Command helps IT enhance security and lower costs.

University of Plymouth Video: Green Education

University of Plymouth with Intel® vPro™ Technology manages power by reducing consumption and carbon emissions for its green agenda.

Eric Dishman Testimony on Aging in Place

Intel’s Eric Dishman testifies before the U.S. Senate Special Committee on Aging on the national broadband plan and bringing health technology home.

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RF CMOS Technology Scaling in High-k/Metal Gate Era

RF CMOS technology benefits from general CMOS technology scaling and improves by innovative transistor and interconnect technologies.

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Strained Germanium QWFE Transistor as P-Channel Device Option for Low Power III-V CMOS Architecture

Demonstrates a Germanium p-channel QWFET with thin scaled TOXE and high mobility, delivering four times higher hole mobility.

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Advanced Metal Gate/High-K Dielectric Stacks for CMOS Transistors

Paper: n-type and p-type metal electrodes on high-K gate dielectrics enable same oxide thickness, desirable transistor threshold, and more.

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Advanced High-K Gate Dielectric for Short-Channel in QWFE Transistors on Silicon Substrate

Paper: composite high-K gate in the QWFET silicon substrate integration for thin electrical oxide, low gate leakage, and carrier confinement.

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Role of High-K Gate Dielectrics

Presentation Discusses Role of High-K Gate Dielectrics and Metal Gate Electrodes in Emerging Nanoelectronic Devices.

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High-κ Gate Dielectrics, Metal Gate Electrodes in Silicon and Non-Silicon Logic Nanotechnology

Discusses low gate-leakage silicon and non-silicon transistor nanotechnology using high-κ gate dielectrics and metal gate electrodes.

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