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英特尔® 高速视频同步技术

英特尔® 高速视频同步技术让您能够在家中在线快速制作、编辑、同步和共享视频。

Strained Germanium QWFE Transistor as P-Channel Device Option for Low Power III-V CMOS Architecture

Demonstrates a Germanium p-channel QWFET with thin scaled TOXE and high mobility, delivering four times higher hole mobility.

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Advanced High-K Gate Dielectric for Short-Channel in QWFE Transistors on Silicon Substrate

Paper: composite high-K gate in the QWFET silicon substrate integration for thin electrical oxide, low gate leakage, and carrier confinement.

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High-k/Metal-Gate Stack and Its MOSFET Characteristics

Article, IEEE Election Device Letters, Vol 25, No. 6, June 2004: High-k/Metal-Gate Stack and Its MOSFET Characteristics.

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Non-Planar, Multi-Gate InGaAs QWFETs with High-K Gate Dielectric and Ultra Scaled Gate-to-Drain/Gate-to-Source Separation

Paper: non-planar, multi-gate InGaAs QWFETs with high-K gate dielectric and ultra-scaled gate-to-drain and gate-to-source separations of 5nm.

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Intel®’s 22nm Technology Moves Transistor Into the 3rd Dimension

Backgrounder: Intel's 22nm innovation ushers in new semiconductor technology and ensures the continuation of Moore's Law.

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Intel Announces New 22nm 3D Tri-gate Transistors

Presentation: Intel introduces a fundamentally different technology for future microprocessor families, 3D transistors manufactured at 22nm.

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Intel Global Manufacturing Facts

Fact Sheet: Intel Global Manufacturing

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上一代英特尔® 处理器资源

上一代英特尔® 处理器包括英特尔® 凌动™、英特尔® 酷睿™、英特尔® 奔腾®、英特尔® 赛扬® 和英特尔® 至强™ 处理器系列。

前一代 Intel® 處理器資源

前一代 Intel® 處理器包含 Intel® Atom™、Intel® Core™、Intel® Pentium®、Intel® Celeron® 以及 Intel® Xeon® 處理器系列產品。