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Demo introduces Intel® 64 Architecture for large-scale, memory hungry applications. This reduces swapping and improves performance.
Covers how Intel® HD Boost accelerates digital multimedia tasks with new SEE4 instructions and optimization, enabling 50 percent better performance.
Integrated memory controller animated demo explains how microarchitecture redesign increases performance and reduces latency.
Video: real-time OS demo working on Intel® Atom™ processor based systems with Intel® Virtualization technology at Embedded World 2010.
Video: Intel® Architecture, powerful, efficient, scalable, flexible storage solutions.
The visual features built into the processor deliver everything you need to enjoy a stunning and seamless experience when viewing content on your PC.
Video: Product Manager Netbooks and Tablets Group Larry Chao overviews the tablets on display in the Intel booth at CES 2011.
Intel® Xeon® processor 5600 series-based workstations with Intel® Turbo Boost offer better design performance for productivity and energy efficiency.
Demo introduces benefits of clock speed. Processors with faster clock speed can benefit most applications
Intel's tick-tock model maintains an innovation cadence in microprocessor manufacturing and microarchitecture with new advancements every other year.
Intel's silicon technology manufacturing makes fast, smart, and energy-efficient technologies to better performance and reduce environmental impact.
Downloadable software developer manuals and CD-ROM resource ordering information for Intel® 64 and IA-32 Architectures.
Intel introduces innovative silicon technology processes, delivering leaps in performance, energy efficiency, and enabling richer applications.
This demo explains the process of creating a silicon photonics circuit and how it transfers data through an optic fiber.
Intel® AMT enables IT to remotely manage and repair PCs, workstations, and entry servers, utilizing same infrastructure and tools across platforms.
RF CMOS technology benefits from general CMOS technology scaling and improves by innovative transistor and interconnect technologies.
Presentation: SiO2 scaling, high-k/metal-gate problems, breakthroughs, and performance reports for NMOS and PMOS transistors.
Gate Dielectric Scaling for High-Performance CMOS: SiO2 to High-K, an option for the 45nm high-performance logic technology node.
Demonstrates a Germanium p-channel QWFET with thin scaled TOXE and high mobility, delivering four times higher hole mobility.
Paper: n-type and p-type metal electrodes on high-K gate dielectrics enable same oxide thickness, desirable transistor threshold, and more.
Paper: composite high-K gate in the QWFET silicon substrate integration for thin electrical oxide, low gate leakage, and carrier confinement.
Paper: composite high-K gate in the QWFET silicon substrate integration for thin electrical oxide, low gate leakage, and carrier confinement.
Presentation Discusses Role of High-K Gate Dielectrics and Metal Gate Electrodes in Emerging Nanoelectronic Devices.
Discusses low gate-leakage silicon and non-silicon transistor nanotechnology using high-κ gate dielectrics and metal gate electrodes.
Article, IEEE Election Device Letters, Vol 25, No. 6, June 2004: High-k/Metal-Gate Stack and Its MOSFET Characteristics.