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This demo explains the process of creating a silicon photonics circuit and how it transfers data through an optic fiber.
Intel® AMT enables IT to remotely manage and repair PCs, workstations, and entry servers, utilizing same infrastructure and tools across platforms.
Paper covers optimization for a 32nm SoC platform with 2nd Generation high-k/Metal gate transistors.
Intel® Intelligent Power Technology conserves energy and increases server performance by delivering efficient power management.
Intel's tick-tock model maintains an innovation cadence in microprocessor manufacturing and microarchitecture with new advancements every other year.
Intel transforms itself and the world by focusing more on technology development that addresses consumer computing needs and experiences.
Intel® 64 architecture expands addressable memory to over 4 GB by enabling 64-bit computing in embedded designs, improving performance.
Bold forecast inspires the creation of groundbreaking new technologies and more power-efficient processors. (For embedded developers.)
Intel introduces innovative silicon technology processes, delivering leaps in performance, energy efficiency, and enabling richer applications.
Intel's silicon technology manufacturing makes fast, smart, and energy-efficient technologies to better performance and reduce environmental impact.
Downloadable software developer manuals and CD-ROM resource ordering information for Intel® 64 and IA-32 Architectures.
Presentation examines the impacts and benefits of RF CMOS technology scaling in high-k/Metal gate era for RF SoC (System-on-Chip) applications.
RF CMOS technology benefits from general CMOS technology scaling and improves by innovative transistor and interconnect technologies.
Presentation: SiO2 scaling, high-k/metal-gate problems, breakthroughs, and performance reports for NMOS and PMOS transistors.
Gate Dielectric Scaling for High-Performance CMOS: SiO2 to High-K, an option for the 45nm high-performance logic technology node.
Demonstrates a Germanium p-channel QWFET with thin scaled TOXE and high mobility, delivering four times higher hole mobility.
Paper: n-type and p-type metal electrodes on high-K gate dielectrics enable same oxide thickness, desirable transistor threshold, and more.
Paper: composite high-K gate in the QWFET silicon substrate integration for thin electrical oxide, low gate leakage, and carrier confinement.
Video: real-time OS demo working on Intel® Atom™ processor based systems with Intel® Virtualization technology at Embedded World 2010.
Paper: composite high-K gate in the QWFET silicon substrate integration for thin electrical oxide, low gate leakage, and carrier confinement.
Presentation Discusses Role of High-K Gate Dielectrics and Metal Gate Electrodes in Emerging Nanoelectronic Devices.
Discusses low gate-leakage silicon and non-silicon transistor nanotechnology using high-κ gate dielectrics and metal gate electrodes.
Article, IEEE Election Device Letters, Vol 25, No. 6, June 2004: High-k/Metal-Gate Stack and Its MOSFET Characteristics.
Paper examines and evaluates logic performance of Schottky-gate QWFETs against that of advanced Strained Si MOSFETs in low power voltages.