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Video Animation: Mark Bohr Gets Small: 22nm Explained [55 K]
Mark Bohr explains how Intel 3-D transistors manufactured at 22nm ensure the pace of technology advancement for years to come.

Mark Bohr explains how Intel 3-D transistors manufactured at 22nm ensure the pace of technology advancement for years to come.

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Intel Built-in-Visuals Demo [70 K]
The visual features built into the processor deliver everything you need to enjoy a stunning and seamless experience when viewing content on your PC.

The visual features built into the processor deliver everything you need to enjoy a stunning and seamless experience when viewing content on your PC.

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Intel® Architecture: Powering a World of Storage [66 K]
Video: Intel® Architecture, powerful, efficient, scalable, flexible storage solutions.

Video: Intel® Architecture, powerful, efficient, scalable, flexible storage solutions.

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Jasper Forest From Intel Animation [68 K]
Video introduces Jasper Forest: the newest addition to the Intel® Xeon® processor family.

Video introduces Jasper Forest: the newest addition to the Intel® Xeon® processor family.

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Intel® Atom™ Chips Manage Car Propulsion System [67 K]
Video: BLOODHOUND SSC manages calculations behind car propulsion systems with three Intel® Atom™ chips.

Video: BLOODHOUND SSC manages calculations behind car propulsion systems with three Intel® Atom™ chips.

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Intel® Atom™ Processor HD [68 K]
Video: Intel® Atom™ Processor HD.

Video: Intel® Atom™ Processor HD.

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Intel® Atom™-Based Tablets at CES 2011 [68 K]
Video: Product Manager Netbooks and Tablets Group Larry Chao overviews the tablets on display in the Intel booth at CES 2011.

Video: Product Manager Netbooks and Tablets Group Larry Chao overviews the tablets on display in the Intel booth at CES 2011.

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Virtualization Technology on Intel® Atom™ Platform [68 K]
Video: real-time OS demo working on Intel® Atom™ processor based systems with Intel® Virtualization technology at Embedded World 2010.

Video: real-time OS demo working on Intel® Atom™ processor based systems with Intel® Virtualization technology at Embedded World 2010.

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Intel presents Cedar Trail next-gen Atom platform at IDF 2011 [68 K]
Video: Intel presents Cedar Trail next-gen Atom™ platform at IDF 2011.

Video: Intel presents Cedar Trail next-gen Atom™ platform at IDF 2011.

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Cloud Security: Trusted Compute Pools by Intel [66 K]
Watch as our daring hero confronts new-found threats in the cloud and discovers he has a secret weapon: Intel® Trusted Execution Technology.

Watch as our daring hero confronts new-found threats in the cloud and discovers he has a secret weapon: Intel® Trusted Execution Technology.

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Unified Networking with 10 Gigabit Converged Network Adapters [68 K]
Intel® 10 Gigabit Server Adapters support SAN, LAN, and FCoE networks, reducing server interfaces for performance and simplified infrastructure.

Intel® 10 Gigabit Server Adapters support SAN, LAN, and FCoE networks, reducing server interfaces for performance and simplified infrastructure.

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Intel Scale-Out Storage Technologies: Powering Tomorrow's Cloud [64 K]
Video: Scale-out storage based on Intel® Xeon® processors lets you more easily scale your enterprise storage for added data protection and security.

Video: Scale-out storage based on Intel® Xeon® processors lets you more easily scale your enterprise storage for added data protection and security.

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Video: Benefits of a Client-Aware Cloud [66 K]
Video shows how Intel Cloud 2015 Vision offers a balanced, end-to-end model for cloud architecture, from data center to end-point client devices.

Video shows how Intel Cloud 2015 Vision offers a balanced, end-to-end model for cloud architecture, from data center to end-point client devices.

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Video: Experience a Better Cloud with Intelligent Clients [67 K]
Video shows how to optimize cloud security, management, and user experience by leveraging each intelligent client device's power and capabilities.

Video shows how to optimize cloud security, management, and user experience by leveraging each intelligent client device's power and capabilities.

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Intel®’s 22nm Technology Moves Transistor Into the 3rd Dimension
Backgrounder: Intel's 22nm innovation ushers in new semiconductor technology and ensures the continuation of Moore's Law.

Backgrounder: Intel's 22nm innovation ushers in new semiconductor technology and ensures the continuation of Moore's Law.

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Intel Global Manufacturing Facts
Fact Sheet: Intel Global Manufacturing

Fact Sheet: Intel Global Manufacturing

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Strained Germanium QWFE Transistor as P-Channel Device Option for Low Power III-V CMOS Architecture
Demonstrates a Germanium p-channel QWFET with thin scaled TOXE and high mobility, delivering four times higher hole mobility.

Demonstrates a Germanium p-channel QWFET with thin scaled TOXE and high mobility, delivering four times higher hole mobility.

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Non-Planar, Multi-Gate InGaAs QWFETs with High-K Gate Dielectric and Ultra Scaled Gate-to-Drain/Gate-to-Source Separation
Paper: non-planar, multi-gate InGaAs QWFETs with high-K gate dielectric and ultra-scaled gate-to-drain and gate-to-source separations of 5nm.

Paper: non-planar, multi-gate InGaAs QWFETs with high-K gate dielectric and ultra-scaled gate-to-drain and gate-to-source separations of 5nm.

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RF CMOS Technology Scaling in High-k/Metal Gate Era
RF CMOS technology benefits from general CMOS technology scaling and improves by innovative transistor and interconnect technologies.

RF CMOS technology benefits from general CMOS technology scaling and improves by innovative transistor and interconnect technologies.

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High-k/Metal-Gate Stack and Its MOSFET Characteristics
Article, IEEE Election Device Letters, Vol 25, No. 6, June 2004: High-k/Metal-Gate Stack and Its MOSFET Characteristics.

Article, IEEE Election Device Letters, Vol 25, No. 6, June 2004: High-k/Metal-Gate Stack and Its MOSFET Characteristics.

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40nm Sb P-Channel QWFE Transistors in Applications
Presentation discusses high performance 40nm gate length in Sb P-channel compressively strained QWFET for low power logic applications.

Presentation discusses high performance 40nm gate length in Sb P-channel compressively strained QWFET for low power logic applications.

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Gate Dielectric Scaling for CMOS: from SiO2/PolySi to High-K/Metal-Gate
Presentation covers SiO2 scaling, high-k/metal-gate problems, breakthroughs, and performance reports for NMOS and PMOS transistors.

Presentation covers SiO2 scaling, high-k/metal-gate problems, breakthroughs, and performance reports for NMOS and PMOS transistors.

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Advanced High-K Gate Dielectric for Short-Channel in QWFE Transistors on Silicon Substrate
Paper: composite high-K gate in the QWFET silicon substrate integration for thin electrical oxide, low gate leakage, and carrier confinement.

Paper: composite high-K gate in the QWFET silicon substrate integration for thin electrical oxide, low gate leakage, and carrier confinement.

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Evaluation/Transport Physics: Schottky-Gate III-V Compound Semiconductor QWFE Transistors
Paper examines and evaluates logic performance of Schottky-gate QWFETs against that of advanced Strained Si MOSFETs in low power voltages.

Paper examines and evaluates logic performance of Schottky-gate QWFETs against that of advanced Strained Si MOSFETs in low power voltages.

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Moore's Law and Intel Innovations [64 K]
Intel's Moore's Law: Intel co-founder predicted the number of transistors on a chip would double every two years. (For mobile.)

Intel's Moore's Law: Intel co-founder predicted the number of transistors on a chip would double every two years. (For mobile.)

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