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Mark Bohr explains how Intel 3-D transistors manufactured at 22nm ensure the pace of technology advancement for years to come.
The visual features built into the processor deliver everything you need to enjoy a stunning and seamless experience when viewing content on your PC.
Video: Intel® Architecture, powerful, efficient, scalable, flexible storage solutions.
Video introduces Jasper Forest: the newest addition to the Intel® Xeon® processor family.
Video: BLOODHOUND SSC manages calculations behind car propulsion systems with three Intel® Atom™ chips.
Video: Intel® Atom™ Processor HD.
Video: Product Manager Netbooks and Tablets Group Larry Chao overviews the tablets on display in the Intel booth at CES 2011.
Video: real-time OS demo working on Intel® Atom™ processor based systems with Intel® Virtualization technology at Embedded World 2010.
Video: Intel presents Cedar Trail next-gen Atom™ platform at IDF 2011.
Watch as our daring hero confronts new-found threats in the cloud and discovers he has a secret weapon: Intel® Trusted Execution Technology.
Intel® 10 Gigabit Server Adapters support SAN, LAN, and FCoE networks, reducing server interfaces for performance and simplified infrastructure.
Video: Scale-out storage based on Intel® Xeon® processors lets you more easily scale your enterprise storage for added data protection and security.
Video shows how Intel Cloud 2015 Vision offers a balanced, end-to-end model for cloud architecture, from data center to end-point client devices.
Video shows how to optimize cloud security, management, and user experience by leveraging each intelligent client device's power and capabilities.
Backgrounder: Intel's 22nm innovation ushers in new semiconductor technology and ensures the continuation of Moore's Law.
Demonstrates a Germanium p-channel QWFET with thin scaled TOXE and high mobility, delivering four times higher hole mobility.
Paper: non-planar, multi-gate InGaAs QWFETs with high-K gate dielectric and ultra-scaled gate-to-drain and gate-to-source separations of 5nm.
RF CMOS technology benefits from general CMOS technology scaling and improves by innovative transistor and interconnect technologies.
Article, IEEE Election Device Letters, Vol 25, No. 6, June 2004: High-k/Metal-Gate Stack and Its MOSFET Characteristics.
Presentation discusses high performance 40nm gate length in Sb P-channel compressively strained QWFET for low power logic applications.
Presentation covers SiO2 scaling, high-k/metal-gate problems, breakthroughs, and performance reports for NMOS and PMOS transistors.
Paper: composite high-K gate in the QWFET silicon substrate integration for thin electrical oxide, low gate leakage, and carrier confinement.
Paper examines and evaluates logic performance of Schottky-gate QWFETs against that of advanced Strained Si MOSFETs in low power voltages.
Intel's Moore's Law: Intel co-founder predicted the number of transistors on a chip would double every two years. (For mobile.)